LM3492MH/NOPB National Semiconductor, LM3492MH/NOPB Datasheet - Page 5

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LM3492MH/NOPB

Manufacturer Part Number
LM3492MH/NOPB
Description
IC LED DVR DIM 2CH 20-TSSOP
Manufacturer
National Semiconductor
Datasheet

Specifications of LM3492MH/NOPB

Internal Driver
Yes
Type - Primary
Automotive, Backlight
Type - Secondary
High Brightness LED (HBLED)
Mounting Type
Surface Mount
Topology
Step-Up (Boost)
Number Of Outputs
2
Frequency
200kHz ~ 1MHz
Voltage - Supply
4.5 V ~ 65 V
Package / Case
20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Operating Temperature
-40°C ~ 125°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Output
-
Symbol
Boost Converter
I
I
I
I
I
R
V
I
t
t
t
COMM PIN
V
V
I
Thermal Protection
T
T
T
T
CDHC-SRC
CDHC-SINK
CDHC-LEAKAGE
CL-MAX
CL-HALF
FB
on
on-min-ILIM
off
LEAK-FAULT
OTM
OTM-HYS
SD
SD-HYS
FBTH-PWRGD
IOUT-OV
COMM-LOW
DS(on)
Note 1: Absolute Maximum Ratings are limits which damage to the device may occur. Operating ratings are conditions under which operation of the device is
intended to be functional. For guaranteed specifications and test conditions, see the electrical characteristics. Thermal shutdown might occur within ambient
operating temperature range as junction temperature rises above TSD level, customer should refer to efficiency data and thermal resistance data to estimate the
junction temperature to ambient temperature delta.
Note 2: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.
Note 3: The θ
if the junction temperature exceeds 165°C. The maximum power dissipation is a function of T
ambient temperature is PD = (T
Note 4: V
CC
provides self bias for the internal gate drive and control circuits. Device thermal limitations limit external loading.
JA
is measured on a 4-layer standard JEDEC thermal test board with 12 vias, no air flow and 1W power dissipation. Thermal shutdown will occur
Parameter
CDHC pin source current
CDHC pin sink current
CDHC pin leakage current
Integrated MOSFET peak current limit
threshold
Half integrated MOSFET peak current limit
threshold
Integrated MOSFET R
Power-Good FB pin threshold
Feedback pin input current
ON timer pulse width
ON timer minimum pulse width at current
limit
OFF timer pulse width
IOUT pin over-voltage threshold
COMM pin at LOW
COMM pin Open Leakage
Over-temperature indication
Over-temperature indication hysteresis
Thermal shutdown temperature
Thermal shutdown temperature hysteresis T
J(MAX)
– T
A
) /θ
JA
.
DS(on)
Conditions
V
= High
V
= High
DIM = Low, V
R
I
V
V
V
V
V
COMM goes LOW during V
other V
5 mA into COMM
V
T
T
T
SW
J
J
J
J
CDHC
CDHC
FB
IN
IN
IN
IN
COMM
ILIM
5
rising
falling
rising
falling
= 12V, V
= 24V, V
= 12V, V
= 24V, V
= 500 mA
= 3V
= 11 kΩ
= 1.6V, V
= 1.6V, V
IOUT
= 5V
= 1.2V
OUT
OUT
OUT
OUT
J(MAX)
CDHC
FB
FB
= 65V, R
= 32.5V, R
= 65V, R
= 32.5V, R
, θ
= 3V, V
= 3V, V
= 2.6V
JA
and T
IOUT
IOUT
RT
RT
A
. The maximum allowable power dissipation at any
RT
RT
IOUT
= 300 kΩ
= 100 kΩ
= 0V, DIM
= 3V, DIM
= 300 kΩ
= 100 kΩ
rising,
Min
3.3
5.6
1460
0.19
2.25
Typ
800
550
350
145
145
135
165
3.9
2.0
6.7
60
56
15
20
5
www.national.com
Max
0.43
350
4.5
7.8
0.7
46
1
5
Units
µA
µA
nA
µA
µA
ns
ns
ns
ns
ns
ns
°C
°C
°C
°C
A
A
V
V
V

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