CM1636-08DE ON Semiconductor, CM1636-08DE Datasheet - Page 5

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CM1636-08DE

Manufacturer Part Number
CM1636-08DE
Description
IC LCD/CAM EMI FILTER 8CH 16DFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of CM1636-08DE

Resistance (ohms)
200
Capacitance
15pF
Power (watts)
0.1W, 1/10W
Package / Case
16-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Tolerance
-
CM1636
SYMBOL
A
800MHz - 6GHz
C
V
A
V
I
V
DIODE
LEAK
TOTAL
R
C
f
1GHz
ESD
SIG
C
Note 1: T
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
PARAMETER
Resistance
Total Channel Capacitance
Capacitance
Diode Standoff Voltage
Diode Leakage Current (reverse
bias)
Signal Voltage
In-system ESD Withstand Voltage
Cut-off Frequency
Absolute Attenuation @ 1GHz from
Absolute Attenuation @ 800MHz to
a) Human Body Model, MIL-STD-
b) Contact Discharge per IEC
Positive Clamp
Negative Clamp
Z
0dB Level
6GHz from 0dB Level
A
883, Method 3015
61000-4-2 Level 4
=25
SOURCE
°
C unless otherwise specified.
=50Ω, Z
ELECTRICAL OPERATING CHARACTERISTICS
LOAD
=50Ω
Rev. 2 | Page 5 of 22 | www.onsemi.com
CONDITIONS
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
At 2.5V DC, 1MHz, 30mV AC
I
V
I
I
Notes 2
R = 200Ω, C = 15pF;
Note 3
Z
DC Bias = 0V; Notes 1 and 3
Z
DC Bias = 0V; Notes 1 and 35
DIODE
LOAD
LOAD
SOURCE
SOURCE
DIODE
= 10mA
= -10mA
= 10μA
= 3.3V
= 50Ω, Z
= 50Ω, Z
LOAD
LOAD
= 50Ω,
= 50Ω,
MIN
-0.4
160
±30
±15
5.6
24
(SEE NOTE 1)
TYP
-0.8
200
100
6.0
0.1
6.8
30
15
35
30
MAX
240
36
1
UNITS
MHz
pF
pF
μA
kV
kV
dB
dB
Ω
V
V
V

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