CM1621-06DE ON Semiconductor, CM1621-06DE Datasheet - Page 4

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CM1621-06DE

Manufacturer Part Number
CM1621-06DE
Description
IC LCD/CAM EMI FILTER 6CH 12DFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of CM1621-06DE

Resistance (ohms)
100
Capacitance
17pF
Power (watts)
0.1W, 1/10W
Package / Case
12-UDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Tolerance
-
SYMBOL
A
800MHz - 3 GHz
C
V
A
V
R
I
V
DIODE
LEAK
TOTAL
R
C
f
1GHz
ESD
DYN
SIG
C
Note 1: T
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
PARAMETER
Resistance
Total Channel Capacitance
Capacitance C
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
In-system ESD Withstand Voltage
Dynamic Resistance
Cut-off Frequency
Absolute Attenuation @ 1GHz from 0dB
Absolute Attenuation @ 800MHz to
a) Human Body Model (HBM),
b) Contact Discharge per
Positive
Negative
Z
Level
3GHz from 0dB Level
A
MIL-STD-883, Method 3015
IEC 61000-4-2 Level 4
=25
SOURCE
°
C unless otherwise specified.
= 50Ω, Z
ELECTRICAL OPERATING CHARACTERISTICS
LOAD
= 50Ω
Rev. 2 | Page 4 of 11 | www.onsemi.com
CONDITIONS
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
I
V
I
Note 2
Channel R = 100Ω,
Channel C = 15pF
Z
Bias = 0V; Notes 1 and 3
Z
Bias = 0V; Notes 1 and 3
DIODE
LOAD
SOURCE
SOURCE
DIODE
= 1.0mA
= 10μA
=
= 50Ω, Z
= 50Ω, Z
+
3.3V
LOAD
LOAD
= 50Ω, DC
= 50Ω, DC
MIN
±30
±15
6.0
85
27
(SEE NOTE1)
TYP
100
-40
-35
6.0
7.0
2.3
0.9
34
17
90
Note 3
MAX
115
100
135
8.0
41
CM1621
UNITS
MHz
pF
pF
nA
kV
kV
dB
dB
Ω
Ω
Ω
V
V

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