BFR93A,235 NXP Semiconductors, BFR93A,235 Datasheet - Page 5

• Manufacturer Part Number: BFR93A,235
• Description: TRANS NPN 12V 35MA 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93A,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1997 Oct 29
handbook, halfpage
handbook, halfpage
NPN 6 GHz wideband transistor
I
V
(pF)
C c
E
CE
Fig.5
= i
gain
(dB)
Fig.7
0.8
0.6
0.4
0.2
= 8 V; f = 500 MHz.
e
30
20
10
1
0
0
= 0; f = 1 MHz; T
0
0
Collector capacitance as a function of
collector-base voltage; typical values.
Gain as a function of collector current;
typical values.
10
4
j
= 25 C.
20
8
12
30
G UM
MSG
I C (mA)
V CB (V)
MBB252
MBB255
16
40
5
handbook, halfpage
handbook, halfpage
(GHz)
V
V
CE
CE
T f
Fig.6
gain
(dB)
Fig.8
= 5 V; f = 500 MHz; T
= 8 V; f = 1 GHz.
30
20
10
4
8
6
2
0
0
0
0
Transition frequency as a function of
collector current; typical values.
Gain as a function of collector current;
typical values.
10
10
j
= 25 C.
20
20
Product specification
30
30
MSG
G UM
I
I
C
C
BFR93A
(mA)
(mA)
MBB256
MCD089
40
40