BLF7G27L-140,118 NXP Semiconductors, BLF7G27L-140,118 Datasheet - Page 5

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BLF7G27L-140,118

Manufacturer Part Number
BLF7G27L-140,118
Description
TRANS LDMOS SOT502A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G27L-140,118

Voltage - Rated
65V
Transistor Type
LDMOS
Frequency
2.6GHz ~ 2.7GHz
Gain
17dB
Current - Test
1.3A
Voltage - Test
28V
Power - Output
20W
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
NXP Semiconductors
BLF7G27L-140_7G27LS-140
Preliminary data sheet
Fig 3.
Fig 5.
ACPR
(dBc)
PAR
(dB)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−30
−40
−50
−60
−70
885k
11
10
9
8
7
6
0
V
function of average output power;
typical values
0
V
ratio as a function of average output power;
typical values
Single carrier IS-95 ACPR at 885 kHz as a
Single carrier IS-95 peak-to-average power
DS
DS
= 28 V; I
= 28 V; I
10
10
Dq
Dq
(1)
(2)
(3)
(1)
(2)
(3)
= 1300 mA.
= 1300 mA.
20
20
30
30
40
40
All information provided in this document is subject to legal disclaimers.
P
P
001aan511
001aan513
L(AV)
L(AV)
BLF7G27L-140; BLF7G27LS-140
(W)
(W)
50
50
Rev. 2 — 5 April 2011
Fig 4.
Fig 6.
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−50
−60
−70
−80
−90
240
160
1980k
80
0
0
0
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of average output power;
typical values
V
Single carrier IS-95 peak output power as a
function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
10
10
Dq
Dq
= 1300 mA.
= 1300 mA.
20
20
(1)
(2)
(3)
Power LDMOS transistor
30
30
(1)
(2)
(3)
© NXP B.V. 2011. All rights reserved.
40
40
P
P
001aan512
001aan514
L(AV)
L(AV)
(W)
(W)
50
50
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