AUIRF3305 International Rectifier, AUIRF3305 Datasheet - Page 2

• Manufacturer Part Number: AUIRF3305
• Description: MOSFET N-CH 55V 140A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3305

• Input Capacitance (ciss) @ Vds: 3650pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 140A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.008ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 330W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
ƒ
„
…
Notes:
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
V
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by max. junction temperature.
(See fig. 11).
Limited by T
Pulse width
C
C
Limited by T
2
V
avalanche performance.
(BR)DSS
oss
oss
GS
eff.
while V
eff. is a fixed capacitance that gives the same charging time as
=10V. Part not recommended for use above this value.
/ T
J
DS
Jmax
Jmax
1.0ms; duty cycle
is rising from 0 to 80% V
, starting T
, see Fig.12a, 12b, 15, 16 for typical repetitive
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
J
= 25°C, L = 0.17mH R
2%.
™
Parameter
DSS
.
J
= 25°C (unless otherwise specified)
J
G
= 25°C (unless otherwise specified)
= 25 , I
AS
= 75A,
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
41
†
‡
ˆ
This value determined from sample failure population. 100% tested to this
value in production.
R
All AC and DC test conditions based on former package limited
current of 75A.
0.055
Typ.
Typ.
3650
1230
4720
1490
–––
–––
–––
–––
–––
–––
–––
–––
100
450
930
–––
–––
–––
130
4.5
7.5
21
45
16
88
43
34
57
is measured at T
Max.
Max.
-200
–––
–––
–––
250
200
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
560
190
8.0
4.0
1.3
25
75
86
Units
Units
V/°C
m
J
µA
nA
nC
nH
pF
nC
ns
ns
V
V
S
A
V
of approximately 90°C.
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 75A
= 75A
= 25°C, I
= 25°C, I
= 2.6
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 20V
= -20V
= 44V
= 10V
= 28V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
j
j
, I
D
e
e
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 75A
= 75A
= 75A
= 75A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
e
Conditions
Conditions
j
j
j
ej
D
= 1mA
, V
, V
J
= 125°C
DD
GS
f
= 28V
= 0V
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