AUIRF3710ZS International Rectifier, AUIRF3710ZS Datasheet - Page 11

• Manufacturer Part Number: AUIRF3710ZS
• Description: MOSFET N-CH 100V 59A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3710ZS

• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 18 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 160 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 82 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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