AUIRFZ44VZS International Rectifier, AUIRFZ44VZS Datasheet - Page 6

• Manufacturer Part Number: AUIRFZ44VZS
• Description: MOSFET N-CH 60V 57A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFZ44VZS

• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Power - Max: 92W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 57 A
• Power Dissipation: 92 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 43 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
0.001
0.01
0.1
10
60
50
40
30
20
10
Fig 9. Maximum Drain Current Vs.
1
1E-006
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
0.10
0.05
0.02
Case Temperature
0.01
50
T J , Junction Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
175
J
J
2.5
2.0
1.5
1.0
0.5
1
Ci= i Ri
1
Ci
Fig 10. Normalized On-Resistance
-60 -40 -20 0
i Ri
0.001
R
I D = 34A
V GS = 10V
1
R
1
T J , Junction Temperature (°C)
2
Vs. Temperature
R
2
2
R
2
20 40 60 80 100 120 140 160 180
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
0.01
0.960
0.680
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0.00044
0.00585
i (sec)
0.1