AUIRF6215 International Rectifier, AUIRF6215 Datasheet

no-image

AUIRF6215

Manufacturer Part Number
AUIRF6215
Description
MOSFET P-CH 150V 13A TO220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRF6215

Input Capacitance (ciss) @ Vds
860pF @ 25V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Polarity
P Channel
Continuous Drain Current Id
-13A
Drain Source Voltage Vds
-150V
On Resistance Rds(on)
0.29ohm
Rds(on) Test Voltage Vgs
-10V
Power Dissipation Pd
110W
Operating
RoHS Compliant
Configuration
Single
Resistance Drain-source Rds (on)
290 mOhms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
11 W
Mounting Style
Through Hole
Gate Charge Qg
44 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRF6215
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRF6215
Quantity:
15 917
Part Number:
AUIRF6215L
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF6215S
Manufacturer:
IR
Quantity:
12 500
Features
l
l
l
l
l
l
l
l
l
l
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
HEXFET
*Qualification standards can be found at http://www.irf.com/
www.irf.com
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
@T
C
C
C
®
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
is a registered trademark of International Rectifier.
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
A
) is 25°C, unless otherwise specified.
g
Parameter
Parameter
AUTOMOTIVE GRADE
e
GS
GS
@ 10V
@ 10V
G
d
Gate
G
D
S
HEXFET Power MOSFET
V
R
I
D
(BR)DSS
DS(on)
D
Typ.
0.50
–––
–––
AUIRF6215
TO-220AB
10 lbf
Drain
-55 to + 175
D
y
Max.
in (1.1N
0.71
300
max.
-9.0
± 20
-6.6
-5.0
110
310
-13
-44
11
G
D
S
y
Max.
–––
m)
1.4
62
0.29Ω
-150V
Source
-13A
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

Related parts for AUIRF6215

AUIRF6215 Summary of contents

Page 1

... HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE HEXFET Power MOSFET V D (BR)DSS R DS(on TO-220AB AUIRF6215 G Gate @ 10V GS @ 10V lbf Typ. ––– 0.50 ––– -150V max. 0.29Ω -13A ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of ...

Page 4

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 10 20µs PULSE WIDTH -4. 25° Drain-to-Source Voltage (V) DS 100 T ...

Page 5

1MHz iss rss oss ds gd 1600 C iss 1200 C oss 800 C ...

Page 6

T , Case Temperature ( 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 ≤ 0 ...

Page 7

D.U DRIVER -20V 0.01 Ω 15V (BR)DSS Charge 800 600 400 200 ...

Page 8

D.U.T + ƒ ‚ -  • • • Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current Current D.U.T. V Waveform DS Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple ...

Page 9

...

Page 10

... Ordering Information Base part Package Type number AUIRF6215 TO-220 Standard Pack Complete Part Number Form Quantity Tube 50 AUIRF6215 ...

Page 11

... IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

Related keywords