AUIRFU4104 International Rectifier, AUIRFU4104 Datasheet - Page 6

• Manufacturer Part Number: AUIRFU4104
• Description: MOSFET N-CH 40V 42A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFU4104

• Input Capacitance (ciss) @ Vds: 2950pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 10V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 4.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: I-PAK
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 5.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 59 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
0.001
120
100
0.01
80
60
40
20
0.1
10
0
Fig 9. Maximum Drain Current Vs.
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
Case Temperature
0.20
0.10
0.05
0.02
0.01
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
LIMITED BY PACKAGE
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
J
2.0
1.5
1.0
0.5
J
1
Ci= i Ri
Fig 10. Normalized On-Resistance
1
Ci
-60 -40 -20 0
0.001
i Ri
I D = 42A
V GS = 10V
R
1
R
1
T J , Junction Temperature (°C)
Vs. Temperature
2
R
2
2
R
2
20 40 60 80 100 120 140 160 180
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
C
Ri (°C/W)
0.01
0.5067
0.5428
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0.000414
0.004081
i (sec)
0.1