IRLHS6342TR2PBF International Rectifier, IRLHS6342TR2PBF Datasheet - Page 6

• Manufacturer Part Number: IRLHS6342TR2PBF
• Description: MOSFET N-CH 30V 8.7A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS6342TR2PBF

• Input Capacitance (ciss) @ Vds: 1019pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 2.1W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLHS6342PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
S
Qgs1 Qgs2
Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
V
(BR)DSS
15V
t p
DRIVER
L
V DS
D.U.T
R G
+
V DD
-
I AS
A
20V
I
0.01 Ω
AS
t p
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
V
DS
90%
+
-
10%
V
GS
≤ 1
≤ 0.1
t
t
t
t
d(on)
d(off)
r
f
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
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