BUK7Y07-30B,115 NXP Semiconductors, BUK7Y07-30B,115 Datasheet - Page 6

• Manufacturer Part Number: BUK7Y07-30B,115
• Description: MOSFET N-CH 30V 75A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y07-30B,115

• Input Capacitance (ciss) @ Vds: 1773pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Power - Max: 105W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5510-2

NXP Semiconductors
6. Characteristics
Table 6.
BUK7Y07-30B
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
see
V
T
V
R
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
S
S
j
DS
DS
DS
DS
GS
GS
GS
DS
DS
G(ext)
= 25 °C; see
= 25 A; V
= 20 A; dI
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
Figure
Figure 10
Figure 10
Figure
Figure
Figure 14
Figure 16
= 30 V; V
= 30 V; V
= 0 V; V
= 0 V; V
= 25 V; R
= 25 V
= 10 V; I
= 10 V; I
= 0 V; V
= 10 Ω
Rev. 03 — 7 April 2010
10; see
12; see
12; see
DS
GS
S
DS
DS
DS
GS
GS
DS
D
D
/dt = -100 A/µs; V
GS
GS
L
GS
GS
= 25 A; T
= 25 A; T
= 24 V; V
= 0 V; T
= V
= V
= V
Figure 15
= 1 Ω; V
= 20 V; T
= -20 V; T
= 25 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 11
Figure 13
Figure 13
; T
; T
; T
j
= 25 °C;
GS
j
j
j
j
j
GS
j
j
j
= 25 °C;
= -55 °C;
= 175 °C;
= 175 °C;
= 25 °C;
j
j
j
= 25 °C
= 175 °C
= 25 °C
= 25 °C
= -55 °C
= 25 °C
= 10 V;
= 10 V;
GS
N-channel TrenchMOS standard level FET
= 0 V;
BUK7Y07-30B
Min
30
27
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.02
-
2
2
-
5
31
9.5
10.7
1330
495
206
17
30
40
28
0.85
39
53
© NXP B.V. 2010. All rights reserved.
-
594
-
Max
-
-
4
4.4
-
1
500
100
100
13.4
7
-
-
1773
282
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
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