FDD5N50NZTM Fairchild Semiconductor, FDD5N50NZTM Datasheet

no-image

FDD5N50NZTM

Manufacturer Part Number
FDD5N50NZTM
Description
MOSFET N-CH 500V DPAK
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDD5N50NZTM

Input Capacitance (ciss) @ Vds
440pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Power - Max
62W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD5N50NZTM
Manufacturer:
FAIRCHILD
Quantity:
2 200
Part Number:
FDD5N50NZTM
Manufacturer:
FAIRCHILD
Quantity:
8 000
Company:
Part Number:
FDD5N50NZTM
Quantity:
1 890
Company:
Part Number:
FDD5N50NZTM
Quantity:
1 385
Company:
Part Number:
FDD5N50NZTM
Quantity:
5 000
©2009 Fairchild Semiconductor Corporation
FDD5N50NZ Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
*Drain current limited by maximum junction temperature
R
R
D
DM
AR
FDD5N50NZ
N-Channel MOSFET
500V, 4A, 1.5Ω
Features
• R
• Low Gate Charge ( Typ. 9nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
DS(on)
STG
rss
= 1.38Ω ( Typ.)@ V
( Typ. 4pF)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Peak Diode Recovery dv/dt
G
S
GS
= 10V, I
D-PAK
D
= 2A
T
C
= 25
D
o
Parameter
Parameter
C unless otherwise noted*
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
= 25
o
C)
1
C
C
= 25
= 100
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
o
C
o
C)
o
C)
G
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
D
D
S
S
FDD5N50NZ
FDD5N50NZ
-55 to +150
500
±25
304
300
2.0
2.4
6.2
0.5
90
16
10
62
4
4
UniFET-II
November 2009
www.fairchildsemi.com
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

Related parts for FDD5N50NZTM

FDD5N50NZTM Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDD5N50NZ Rev. A Description = 2A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... Package Marking and Ordering Information Device Marking Device FDD5N50NZ FDD5N50NZTM Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Body Leakage Current GSS On Characteristics ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics 15 10.0 V 8.0 V 7.0 V 6.5 V 6 0.1 0 Drain-Source Voltage[V] DS Figure 3. On-Resistance Variation vs. Drain ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature J Figure 9. Maximum Safe Operating Area vs. Case Temperature Operation in This Area is ...

Page 5

FDD5N50NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

...

Page 7

Mechanical Dimensions FDD5N50NZ Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ ...

Related keywords