FQD8P10TM_F085 Fairchild Semiconductor, FQD8P10TM_F085 Datasheet - Page 3

• Manufacturer Part Number: FQD8P10TM_F085
• Description: MOSFET P-CH 100V 6.6A DPAK-3
• Manufacturer: Fairchild Semiconductor

Specifications of FQD8P10TM_F085

• Input Capacitance (ciss) @ Vds: 470pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQD8P10TM_F085 Rev. C1
Typical Characteristics
900
800
700
600
500
400
300
200
100
10
10
1.5
1.2
0.9
0.6
0.3
0.0
10
10
0
-1
-2
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : -4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
V
GS
5
-V
-V
C
C
C
iss
oss
rss
DS
DS
-I
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
D
10
10
, Drain Current [A]
0
10
0
V
GS
= - 20V
V
GS
= - 10V
15
※ Notes :
1. 250μ s Pulse Test
2. T
C
C
C
C
iss
oss
rss
= 25℃
= C
= C
= C
※ Note : T
10
gs
gd
10
ds
1
+ C
+ C
1
20
gd
※ Notes :
gd
1. V
2. f = 1 MHz
(C
J
= 25℃
ds
GS
= shorted)
= 0 V
25
3
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
2
Variation vs. Source Current
150℃
0.5
25℃
150℃
4
-V
-V
4
Q
25℃
SD
and Temperature
GS
G
1.0
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
6
DS
V
-55℃
DS
= -80V
V
1.5
DS
= -50V
6
= -20V
8
2.0
※ Notes :
10
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
www.fairchildsemi.com
= -40V
= 0V
2.5
12
D
= -8.0 A
3.0
10
14