PSMN2R7-30PL,127 NXP Semiconductors, PSMN2R7-30PL,127 Datasheet

PSMN2R7-30PL,127

Manufacturer Part Number

PSMN2R7-30PL,127

Description

MOSFET N-CH 30V TO220AB

Manufacturer

NXP Semiconductors

Datasheet

1.PSMN2R7-30PL127.pdf (15 pages)

Specifications of PSMN2R7-30PL,127

Input Capacitance (ciss) @ Vds

3954pF @ 12V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2.7 mOhm @ 15A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

2.15V @ 1mA

Gate Charge (qg) @ Vgs

66nC @ 10V

Power - Max

170W

Mounting Type

Through Hole

Package / Case

TO-220-3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.7 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Power Dissipation

170 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

568-5235

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

Table 1.

[1]

[2]

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

PSMN2R7-30PL

N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220

Rev. 02 — 2 November 2010

High efficiency due to low switching

and conduction losses

DC-to-DC converters

Load switching

Continuous current is limited by package.

Measured 3 mm from package.

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

junction temperature

drain-source on-state

resistance

gate-drain charge

total gate charge

non-repetitive

drain-source avalanche

energy

Conditions

see

≥ 25 °C; T

= 25 °C; see

= 100 A; V

Figure 1

Figure 15

= 25 °C; V

= 25 °C; see

= 15 V; see

= 10 V; I

= 4.5 V; I

= 10 V; T

= 50 Ω; unclamped

sup

≤ 175 °C

j(init)

= 15 A;

= 25 A;

Figure 12

Suitable for logic level gate drive

sources

Motor control

Server power supplies

Figure

≤ 30 V;

Figure 2

= 10 V;

= 25 °C;

14;

[1]

[2]

Min

-55

Product data sheet

Typ

2.2

Max Unit

100

170

175

2.7

300

°C

mΩ

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PSMN2R7-30PL,127 Summary of contents

Page 1

... PSMN2R7-30PL N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 Rev. 02 — 2 November 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

Page 3

... V sup GS 003aad358 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure 1 - Figure -55 -55 [ 100 A; ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN2R7-30PL Product data sheet N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 = DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL 003aad382 10 μs 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN2R7-30PL Product data sheet N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Min Typ Max - 0.54 0.88 003aad355 t p δ ...

Page 6

... Figure MHz see Figure 14; see Figure see Figure 14; see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Min Typ Max 1.3 1.7 2.15 0 2. 100 - 10 100 - 10 100 - 2 3.5 ...

Page 7

... R G(ext see Figure /dt = -100 A/µ 003aad404 100 (A) GS 2.8 2.6 2 (V) DS Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Min Typ = 4 ° 175 ° ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 8

... (V) GS Fig 10. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL 003aad411 100 I (A) D 003aab271 min typ max ( © NXP B.V. 2010. All rights reserved ...

Page 9

... T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values 03aa27 120 180 ( ° Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL 003aad405 V (V) = 2 GS(pl) V ...

Page 10

... G Fig 16. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL function of drain-source voltage; typical values 003aad407 = 25 ° 0 (V) SD © NXP B.V. 2010. All rights reserved. ...

Page 11

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN2R7-30PL v.2 20101102 • Modifications: Status changed from objective to product. • Various changes to content. PSMN2R7-30PL v.1 20100226 PSMN2R7-30PL Product data sheet N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220 Data sheet status ...

Page 13

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN2R7-30PL Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 November 2010 Document identifier: PSMN2R7-30PL ...

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