NTE2331 NTE ELECTRONICS, NTE2331 Datasheet
NTE2331
Manufacturer Part Number
NTE2331
Description
Replacement Semiconductors TO-3PML NPN HOR DEFL
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2331.pdf
(2 pages)
Specifications of NTE2331
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
800V
Power Dissipation Pd
60W
Dc Collector Current
6A
Dc Current Gain Hfe
10
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Applications:
D Color TV Horizontal Deflection Output
D Color Display Horizontal Deflection Output
Features:
D High Speed (t
D High Breakdown Voltage (V
D High Reliability
D On–Chip Damper Diode
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Saturation Voltage
Saturation Voltage
Collector to Emitter
Base to Emitter
Continous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100nsec)
C
Color TV Horizontal Deflection Output
C
EBO
= +25 C), P
CBO
CEO
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
CEO(sus)
CE(sat)
CBO
stg
I
I
BE(sat)
A
I
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1500V)
= +25 C unless otherwise specified)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
w
/Damper Diode
V
V
I
V
I
I
C
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
CB
EB
= 100mA, I
= 5A, I
= 5A, I
NTE2331
= 4V
= 1500V
= 800V
Test Conditions
B
B
= 1.0A
= 1.0A
B
= 0
Min
800
40
–
–
–
–
Typ
–
–
–
–
–
–
–55 to +150 C
Max Unit
130
1.0
1.5
10
–
5
+150 C
1500V
mA
mA
800V
60W
V
V
V
20A
A
6V
6A
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NTE2331 Summary of contents
Page 1
... Operating Junction Temperature, T Storage Temperature Range, T Electrical Characteristics: (T Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Saturation Voltage Collector to Emitter Saturation Voltage Base to Emitter NTE2331 Silicon NPN Transistor w /Damper Diode = 1500V) CBO = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter DC Current Gain Diode Forward Voltage Fall Time .123 (3.1) = +25 C unless otherwise specified) A Symbol Test Conditions 5V FE1 5V, I ...