NTE2365 NTE ELECTRONICS, NTE2365 Datasheet
NTE2365
Manufacturer Part Number
NTE2365
Description
Replacement Semiconductors TO3-P NPN TRANS
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2365.pdf
(2 pages)
Specifications of NTE2365
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
800V
Power Dissipation Pd
180W
Dc Collector Current
15A
Dc Current Gain Hfe
8
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D High Speed: t
D High Reliability
D High Breakdown Voltage: V
Absolute Maximum Ratings: (T
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Collector Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Collector Sustaining Voltage
Emitter Cutoff Current
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
DC Current Gain
Storage Time
Fall Time
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
= 100ns typ
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage Horizontal Deflection Output
C
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
CEO
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
TO3PBL Type Package
= +25°C unless otherwise specified)
A
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
= +25°C unless otherwise specified)
CEO(sus)
= 1500V
h
h
I
I
CE(sat)
BE(sat)
I
CBO
FE(1)
FE(2)
CES
EBO
t
stg
t
f
NTE2365
V
V
I
V
I
I
V
V
I
C
C
C
C
CB
CE
EB
CE
CE
= 100mA, I
= 10A, I
= 10A, I
= 8A, I
= 4V, I
= 800V, I
= 1500V, R
= 5V, I
= 5V, I
Test Conditions
B1
B
B
C
C
C
= 1.6A, I
= 2.5A
= 2.5A
= 0
= 1A
= 10A
E
B
= 0
= 0
BE
= 0
B2
= −3.2A
Min
800
−
−
−
−
−
8
4
−
−
Typ Max Unit
−
−
−
−
−
−
−
−
−
−
−55° to +150°C
1.0
1.0
1.5
3.0
0.2
10
30
−
5
8
+150°C
1500V
180W
800V
mA
mA
μA
μs
μs
15A
35A
V
V
V
6V
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NTE2365 Summary of contents
Page 1
... Parameter Collector Cutoff Current Collector Sustaining Voltage Emitter Cutoff Current Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage DC Current Gain Storage Time Fall Time NTE2365 Silicon NPN Transistor TO3PBL Type Package = 1500V CBO = +25°C unless otherwise specified CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Dia Max .215 (5.45) B .810 (20.57) Max .098 (2.5) .040 (1. Note: Pin2 connected to metal part of mounting surface. .204 (5.2) 1.030 (26.16) .787 (20.0) .023 (0.6) ...