DG419LDY-E3 Vishay, DG419LDY-E3 Datasheet - Page 3

• Manufacturer Part Number: DG419LDY-E3
• Description: Analog Switch ICs SPDT Analog Switch
• Manufacturer: Vishay
• Type: Analog Switchr

Specifications of DG419LDY-E3

• Number Of Switches: Single
• Switch Configuration: SPDT
• On Resistance (max): 70 Ohms
• On Time (max): 75 ns
• Off Time (max): 41 ns
• Supply Voltage (max): 12 V
• Supply Voltage (min): 2.7 V
• Supply Current: 0.00002 mA
• Maximum Power Dissipation: 400 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 40 C
• Propagation Delay Time: 47 ns
• Analog Switch Type: SPDT
• No. Of Channels: 1
• On State Resistance Max: 18.5ohm
• Turn Off Time: 32ns
• Turn On Time: 41ns
• Supply Voltage Range: 2.7V To 12V
• Operating Temperature Range: -40°C To +85°C
• Package: 8SOIC N
• Maximum On Resistance: 70@2.7V Ohm
• Maximum Propagation Delay Bus To Bus: 47@±5V ns
• Maximum High Level Output Current: 30 mA
• Maximum Turn-off Time: 41@3V ns
• Maximum Turn-on Time: 75@3V ns
• Switch Architecture: SPDT
• Power Supply Type: Single|Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 71763
S-71009–Rev. E, 14-May-07
SPECIFICATIONS (DUAL SUPPLY ± 5 V)
Parameter
Analog Switch
Analog Signal Range
On-Resistance
Switch Off
Leakage Current
Channel On
Leakage Current
Digital Control
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Delay
TransitionTime
Charge Injection
Off-Isolation
Channel-to-Channel
Crosstalk
Source Off Capacitance
Channel-On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
e
e
e
a
e
e
e
e
a
a
e
e
e
e
e
e
I
INL
V
Symbol
I
I
C
C
COM(off)
COM(on)
t
I
I
ANALOG
OIRR
X
NO(off)
TRANS
NC(off)
I
Q
NO(off)
C
t
NC(off)
r
t
GND
OFF
TALK
or I
ON
ON
t
I+
I
I-
INJ
ON
D
L
INH
V
R
I
DG419L Only, V
NO
Unless Otherwise Specified
NO
V
L
V
V
V
g
, I
= 50 Ω, C
, V
S1
L
NO
R
R
R
V+ = 5.5 V, V- = - 5.5 V
= 0 V, R
NC
V+ = 5.5 , V- = - 5.5 V
= 5 V, V
L
L
L
, V
NC
V+ = 5 V, V- = - 5 V
V+ = 5 V, V- = - 5 V
V
= ± 3.5 V, V
Test Conditions
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
NO
= 5 mA, V
V
NC
= ± 3.5 V, See Figure 2
V
COM
, V
f = 1 MHz
IN
= V
g
L
IN
NC
= 0 or V
= 0 Ω, C
= 5 pF , f = 1 MHz
= ± 4.5 V
= 2.4 V, 0.8 V
COM
NO
= ± 4.5 V
S2
COM
L
L
L
, V
= 35 pF
= 35 pF
= 35 pF
= ± 4.5 V
= ± 3.5 V
L
NC
L
= ± 3.5 V
= 1 nF
= 3.5 V
f
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
- 0.002
- 0.002
0.002
Typ
0.05
0.03
- 71
- 76
5.2
14
30
16
10
33
15
3
c
A Suffix Limits
- 55 to 125 °C
Min
- 1.5
- 7.5
- 7.5
- 15
- 15
- 15
- 5
- 1
- 1
- 1
- 1
- 1
DG417L/418L/419L
d
Max
18.5
1.5
7.5
7.5
30
15
15
15
41
50
32
36
47
5
1
1
1
1
1
d
Vishay Siliconix
D Suffix Limits
Min
- 10
- 10
- 10
- 40 to 85 °C
- 5
- 1
- 1
- 1
- 1
- 1
- 5
- 1
- 5
d
www.vishay.com
Max
18.5
21
10
10
10
41
44
32
33
47
5
1
1
1
1
1
5
1
5
d
Unit
nA
µA
pC
dB
pF
µA
ns
Ω
V
3