MAX19993ETX+ Maxim Integrated Products, MAX19993ETX+ Datasheet - Page 2

RF Mixer DUAL SIGE HI-LIN W/LO BUFFER/SWITCH

MAX19993ETX+

Manufacturer Part Number
MAX19993ETX+
Description
RF Mixer DUAL SIGE HI-LIN W/LO BUFFER/SWITCH
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of MAX19993ETX+

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note 1: Based on junction temperature T
Note 2: Junction temperature T
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
Note 4: T
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
V
LO1, LO2 to GND .............................................................. Q0.3V
LOSEL to GND ......................................... -0.3V to (V
RFMAIN, RFDIV, and LO_ Input Power ........................ +15dBm
RFMAIN, RFDIV Current (RF is DC shorted to GND
TAPMAIN, TAPDIV to GND .....................................-0.3V to +2V
Any Other Pins to GND ............................ -0.3V to (V
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
R2 = R5 = 1.82kI. Typical values are at V
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
Typical values are at V
tested.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
Supply Voltage
Supply Current
LOSEL Input High Voltage
LOSEL Input Low Voltage
LOSEL Input Current
Supply Voltage
Supply Current
LOSEL Input High Voltage
LOSEL Input Low Voltage
CC
through a balun) .............................................................50mA
to GND ..........................................................-0.3V to +5.5V
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150NC.
known. The junction temperature must not exceed +150NC.
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
C
PARAMETER
PARAMETER
is the temperature on the exposed pad of the package. T A is the ambient temperature of the device and PCB.
CC
= 3.3V, T
CC
J
CC
= T
= 3.0V to 3.6V, no input AC signals. T
C
SYMBOL
I
A
IH and
SYMBOL
= 4.75V to 5.25V, no input AC signals. T
= +25NC, unless otherwise noted. Parameters are guaranteed by design and not production
+ (B
V
I
V
V
V
CC
I
V
V
CC
CC
IH
IL
CC
IH
IL
J
CC
JA
= T
I
IL
= 5.0V, T
x V
C
Total supply current
+ (B
Total supply current (Note 5)
CC
CC
CC
x I
JC
C
CC
+ 0.3V)
+ 0.3V)
x V
= +25NC, unless otherwise noted. All parameters are production tested.)
). This formula can be used when the ambient temperature of the PCB is
CC
x I
CONDITIONS
CONDITIONS
CC
). This formula can be used when the temperature of the
Continuous Power Dissipation (Note 1) ..............................8.7W
B JA (Notes 2, 3) ........................................................... +38NC/W
B JC (Notes 1, 3) .............................................................7.4NC/W
Operating Temperature Range (Note 4) ... T
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
C
= -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI.
C
= -40NC to +85NC, R1 = R4 = 681I,
4.75
MIN
-10
MIN
3.0
2
TYP
337
TYP
275
3.3
0.8
5
2
C
MAX
= -40NC to +85NC
5.25
400
+10
MAX
0.8
3.6
UNITS
UNITS
mA
FA
mA
V
V
V
V
V
V

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