SI4914BDY-T1-E3 Vishay, SI4914BDY-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI4914BDY-T1-E3
• Description: MOSFET Small Signal 30V 8.4/8.0A 2.1/3.1
• Manufacturer: Vishay

Specifications of SI4914BDY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.021 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.7 A @ Channel 1 or 7.4 A @ Channel 2
• Power Dissipation: 1700 mW @ Channel 1 or 2000 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 7.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.7V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4914BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.040
0.034
0.028
0.022
0.016
0.010
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
I
D
= 8 A
On-Resistance vs. Drain Current
0.5
3.4
10
V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
DS
- Total Gate Charge (nC)
V
I
D
GS
= 15 V
- Drain Current (A)
Gate Charge
1.0
6.8
20
= 4.5 V
V
GS
V
DS
= 10 V thru 5 V
V
GS
= 10 V
10.2
1.5
30
= 10 V
V
DS
4 V
3 V
= 20 V
13.6
2.0
40
17.0
2.5
50
1200
960
720
480
240
2.0
1.6
1.2
0.8
0.4
1.7
1.5
1.3
1.1
0.9
0.7
0
0
- 50
0
0
C
I
rss
T
D
J
On-Resistance vs. Junction Temperature
= 7.5 A
- 25
= 125 °C
T
1.2
J
6
V
V
= 25 °C
Transfer Characteristics
DS
GS
T
C
0
C
J
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
iss
- Junction Temperature (°C)
Capacitance
25
2.4
12
S09-2109-Rev. E, 12-Oct-09
50
Document Number: 69654
3.6
18
75
V
T
GS
J
V
= - 55 °C
= 10 V
GS
100
4.8
= 4.5 V
24
125
6.0
150
30