TN2524N8-G Supertex, TN2524N8-G Datasheet - Page 2

• Manufacturer Part Number: TN2524N8-G
• Description: MOSFET Small Signal 240V 6Ohm
• Manufacturer: Supertex

Specifications of TN2524N8-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.36 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
† I
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
ΔV
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
TO-243AA (SOT-89)
DSS
DS(ON)
t
OSS
RSS
t
D
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
OUTPUT
Parameter
INPUT
V
10V
0V
DD
0V
10%
GS(th)
DS(ON)
with temperature
t
d(ON)
with temperature
10%
t
(ON)
(continuous)
90%
●
t
r
0.36
j
1235 Bordeaux Drive, Sunnyvale, CA 94089
(A)
.
I
D
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
†
90%
t
O
d(OFF)
C unless otherwise specified)
t
(OFF)
(pulsed)
t
90%
F
2.0
(A)
I
D
10%
2
Power Dissipation
Min
240
300
0.6
0.5
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
Typ
600
300
1.9
2.8
4.0
4.0
A
1.6
65
35
10
(W)
GENERATOR
-
-
-
-
-
-
-
-
-
-
-
-
= 25
PULSE
‡
●
O
C
Tel: [phone]
Max
-5.0
100
125
R
INPUT
2.0
1.0
6.0
6.0
1.4
1.8
10
70
25
10
10
20
20
GEN
-
-
-
-
-
mV/
mmho V
Units
%/
mA
µA
nA
pF
ns
ns
(
Ω
V
V
A
V
O
O
C/W)
θ
15
O
C
jc
C V
●
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
www.supertex.com
GEN
= 1.0A,
(
O
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0.8 Max Rating,
= 0V, T
= 4.5V, V
= 10V, V
= 4.5V, I
= 10, I
= 10V, I
= 25V, I
= 0V,
= 25V,
= 25V,
= 0V, I
= 0V, I
78
C/W)
θ
= 25Ω
ja
V
‡
DS
DS
DD
R
, I
, I
L
D
D
SD
SD
A
D
D
DS
D
D
D.U.T.
= 500mA
= 2.0mA
= 1.0mA
= 1.0mA
D
= 125°C
DS
= 1.0A
= 1.0A
OUTPUT
DS
= 500mA
= 500mA
0.36
= Max Rating
= 250mA
I
DS
(A)
DR
= 25V
= 25V
†
= 0V
TN2524
I
2.0
DRM
(A)