SI1900DL-T1-E3 Vishay, SI1900DL-T1-E3 Datasheet

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... DS DS(on) 0.480 0.700 4 Ordering Information: Si1900DL-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter ...

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... Si1900DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

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... J 0.1 0.0 0.2 0.4 0 Source-Drain Diode Forward Voltage Document Number: 71251 S10-1054-Rev. F, 03-May- 0.6 0.8 1.0 0.6 0.8 1 °C J 0.8 1.0 1 Si1900DL Vishay Siliconix iss oss rss Drain-to-Source Voltage (V) DS Capacitance 1 0. 1.6 1.4 1.2 1.0 0.8 0 100 T - Junction Temperature (°C) J On-Resistance vs ...

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... Si1900DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 µ 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...

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