BS107P Diodes Inc, BS107P Datasheet

MOSFET Small Signal N-Chnl 200V

BS107P

Manufacturer Part Number
BS107P
Description
MOSFET Small Signal N-Chnl 200V
Manufacturer
Diodes Inc
Datasheet

Specifications of BS107P

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
30 Ohm @ 5 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.12 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
E-Line
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BS107P
Manufacturer:
INFINEON
Quantity:
2 000
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate Body Leakage
Drain Cut-Off Current
Drain Cut-Off Current
Static Drain-Source
on-State Resistance
200 Volt V
R
REFER TO BS107PT FOR GRAPHS
DS(on)
=23
DS
amb
=25°C
SYMBOL
BV
I
I
I
R
GSS
DSS
DSX
DS(on)
DSS
amb
=25°C
MIN.
200
3-23
TYP.
230
15
SYMBOL
I
I
V
P
T
V
D
DM
tot
j
DS
GS
:T
amb
stg
MAX.
10
30
1
23
30
= 25°C)
UNIT
V
nA
nA
A
2%
-55 to +150
VALUE
0.12
200
500
2
20
CONDITIONS.
I
VGS=15V, V
V
V
V
V
D
GS
GS
GS
GS
=100 A, V
TO92 Compatible
BS107P
=0V, V
=0.2V, V
=2.6V, I
=5V, I
D
G
S
E-Line
D
DS
=100mA*
D
GS
DS
DS
=25mA*
=130V
=0V
=0V
=70V
UNIT
mW
°C
V
A
A
V

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