BSP123 L6327 Infineon Technologies, BSP123 L6327 Datasheet - Page 2

• Manufacturer Part Number: BSP123 L6327
• Description: MOSFET Small Signal N-CH 100 V 0.37 A
• Manufacturer: Infineon Technologies

Specifications of BSP123 L6327

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.37 A
• Power Dissipation: 1790 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSP123L6327XT

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
GS
=50µA
=100V, V
=100V, V
=0, I
=20V, V
=2.8V, I
=4.5V, I
=10V, I
2
D
cooling area
=250µA
D
D
D
DS
=0.37A
GS
GS
=15mA
=0.3A
=0
=0, T
=0, T
j
j
=25°C
=150°C
1)
GS
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Rev. 1.5
Symbol
V
V
I
I
R
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
DS(on)
thJS
thJA
min.
min.
100
0.8
-
-
-
-
-
-
-
-
-
Values
Values
typ.
100
typ.
1.4
4.8
3.5
14
51
15
-
-
-
-
max.
max.
0.01
115
1.8
10
30
10
70
25
2010-06-22
6
5
-
BSP123
Unit
V
µA
nA
Unit
K/W