SI4410BDY-T1-E3 Vishay, SI4410BDY-T1-E3 Datasheet

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... SO Top View Ordering Information: Si4410BDY-T1-E3 (Lead (Pb)-free) Si4410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si4410BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72211 S09-0705-Rev. D, 27-Apr-09 2000 1600 1200 0.10 0.08 0.06 0. °C J 0.02 0.00 0.8 1.0 1.2 Si4410BDY Vishay Siliconix C iss 800 C oss 400 C rss Drain-to-Source Voltage (V) DS Capacitance 2 1.6 1.2 0.8 0.4 0.0 ...

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... Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on) ...

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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72211. Document Number: 72211 S09-0705-Rev. D, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4410BDY Vishay Siliconix -1 1 www.vishay.com 10 5 ...

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