SI7460DP-T1-E3 Vishay, SI7460DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7460DP-T1-E3
• Description: MOSFET Small Signal 60V 18A 5.4W 9.6mohm @ 10V
• Manufacturer: Vishay

Specifications of SI7460DP-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0096 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 9.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si7460DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.4
- 0.8
- 1.2
0.8
0.4
0.0
0.01
- 50
0.1
2
1
10
- 4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
I
D
J
= 250 μA
- Temperature (°C)
25
10
- 3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
10
100
1
0.1
- 2
Limited by R
Limited
I
125
D(on)
Single Pulse
T
A
Square Wave Pulse Duration (s)
V
= 25 °C
150
DS
DS(on)
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
*
- 1
BV
DSS
100
10
80
60
40
20
Limited
0
1
0.01
Single Pulse Power, Junction-to-Ambient
Limited
I
DM
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (s)
- T
t
1
A
1
S09-0227-Rev. D, 09-Feb-09
= P
t
2
Document Number: 72126
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 52 °C/W
10
600
100