2N7002A-7 Diodes Inc, 2N7002A-7 Datasheet
2N7002A-7
Manufacturer Part Number
2N7002A-7
Description
MOSFET Small Signal N-CHANNEL ENHANCEMENT MODE
Manufacturer
Diodes Inc
Datasheet
1.2N7002A-7.pdf
(4 pages)
Specifications of 2N7002A-7
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.115 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002A-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage (Note 1)
Drain Current (Note 1)
Total Power Dissipation
Derating above T
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Features
•
•
•
•
•
•
•
•
•
Notes:
2N7002A
Document number: DS31360 Rev. 4 - 2
N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1.2kV HBM
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Qualified to AEC-Q101 Standards for High Reliability
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb203 Fire Retardants.
A
= 25°C (Note 1)
ESD PROTECTED, 1.2kV
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
Continuous @ 100°C
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
@ T
@ T
@ T
@ T
TOP VIEW
Continuous
Continuous
C
C
J
J
= 25°C
= 125°C
= 25°C
= 125°C
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Pulsed
www.diodes.com
Symbol
R
SOT-23
BV
V
t
t
DS (ON)
D(OFF)
I
C
D(ON)
I
C
1 of 4
GS(th)
C
g
DSS
GSS
oss
FS
DSS
iss
rss
Mechanical Data
Symbol
Symbol
T
•
•
•
•
•
•
•
•
•
J,
V
V
R
P
GSS
DSS
I
T
θ JA
Please click here to visit our online spice models database.
D
Min
D
1.2
STG
60
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Copper
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Gate
Equivalent Circuit
Typ
3.5
3.0
3.4
1.4
70
23
10
33
⎯
⎯
⎯
⎯
Gate
Protection
Diode
Max
500
±10
1.0
2.0
Drain
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
5
Source
-55 to +150
Unit
mS
µA
μA
pF
pF
pF
ns
ns
Ω
V
V
Value
Value
±20
115
800
250
500
1.6
60
73
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
DS
GS
GS
DS
DS
DD
GEN
G
= 0V, I
= 60V, V
= ±20V, V
= V
= 5.0V, I
= 10V, I
= 10V, I
= 25V, V
= 30V, I
= 10V
GS
TOP VIEW
, I
Test Condition
D
D
,
D
D
D
D
= 10μA
D
R
GS
GS
= 250μA
= 0.115A
DS
= 0.115A
= 0.115A, R
GEN
= 0.115A
= 0V
= 0V, f = 1.0MHz
= 0V
S
= 25Ω
mW/°C
© Diodes Incorporated
2N7002A
Units
Units
°C/W
mW
mA
°C
V
V
L
= 150Ω,
May 2008
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2N7002A-7 Summary of contents
Page 1
... J ⎯ (ON 125° ⎯ C iss ⎯ C oss ⎯ C rss ⎯ t D(ON) ⎯ t D(OFF www.diodes.com 2N7002A Drain Gate Protection Source Diode TOP VIEW Value Units 60 ±20 115 73 800 Value Units 250 1.6 mW/°C 500 °C/W -55 to +150 Typ Max Unit Test Condition ⎯ ...
Page 2
... Document number: DS31360 Rev 0 85°C 0.01 1 2.5 2.0 1.5 1.0 0.5 0 0.4 0.5 0.6 100 I = 250µ 100 125 150 www.diodes.com 2N7002A Pulsed T = 150° 25° -55° GATE SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics C iss C oss C rss 5 10 ...
Page 3
... V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 5) Part Number 2N7002A-7 Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2008 2009 Code V W Month Jan ...
Page 4
... Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 2N7002A Document number: DS31360 Rev Dimensions Value (in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com 2N7002A Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 © Diodes Incorporated ...