ZXMN7A11KTC Diodes Inc, ZXMN7A11KTC Datasheet

MOSFET Power 70V N-Channel 6.1A MOSFET

ZXMN7A11KTC

Manufacturer Part Number
ZXMN7A11KTC
Description
MOSFET Power 70V N-Channel 6.1A MOSFET
Manufacturer
Diodes Inc
Datasheet
1.ZXMN7A11KTC.pdf (8 pages)

Specifications of ZXMN7A11KTC

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
70 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.1 A
Power Dissipation
8500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ZXMN7A11K
70V N-channel enhancement mode MOSFET
Summary
V
I
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
•
•
•
•
•
Applications
•
•
•
•
•
Ordering information
Device marking
ZXMN
7A11
Issue 2 - August 2006
© Zetex Semiconductors plc 2006
D
Device
ZXMN7A11KTC
(BR)DSS
=6.1A
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
DPAK package
DC-DC converters
Power management functions
Disconnect switches
Motor control
Class D audio output stages
=70V : R
DS(on)
=0.13
Reel size
(inches)
13
Tape width
(mm)
16
1
Quantity per reel
2,500
Pinout - top view
G
www.zetex.com
G
D
D
D
S
S

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ZXMN7A11KTC Summary of contents

Page 1

... Power management functions • Disconnect switches • Motor control • Class D audio output stages Ordering information Device Reel size (inches) ZXMN7A11KTC 13 Device marking ZXMN 7A11 Issue 2 - August 2006 © Zetex Semiconductors plc 2006 Tape width Quantity per reel (mm) 16 2,500 ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at T =25°C (a) A Linear derating factor Power dissipation at ...

Page 3

Characteristics Issue 2 - August 2006 © Zetex Semiconductors plc 2006 ZXMN7A11K 3 www.zetex.com ...

Page 4

Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage V Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance ...

Page 5

Typical characteristics Issue 2 - August 2006 © Zetex Semiconductors plc 2006 ZXMN7A11K 5 www.zetex.com ...

Page 6

Typical characteristics Issue 2 - August 2006 © Zetex Semiconductors plc 2006 ZXMN7A11K 6 www.zetex.com ...

Page 7

Issue 2 - August 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN7A11K www.zetex.com ...

Page 8

Package outline - DPAK DIM Inches Min Max A 0.086 0.094 A1 - 0.005 b 0.020 0.035 b2 0.030 0.045 b3 0.205 0.215 c 0.018 0.024 c2 0.018 0.023 D 0.213 0.245 D1 0.205 - E 0.250 0.265 E1 0.170 ...

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