SUD15N15-95-E3 Vishay, SUD15N15-95-E3 Datasheet

MOSFET Power 150V 15A 62W

SUD15N15-95-E3

Manufacturer Part Number
SUD15N15-95-E3
Description
MOSFET Power 150V 15A 62W
Manufacturer
Vishay
Datasheet

Specifications of SUD15N15-95-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.095 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
2700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Continuous Drain Current Id
15A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
95mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-252
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD15N15-95-E3
Manufacturer:
VIHSAY
Quantity:
20 000
Company:
Part Number:
SUD15N15-95-E3
Quantity:
70 000
Notes
a.
b.
Document Number: 71641
S-31724—Rev. B, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
Junction-to-Case
V
Surface Mounted on 1” x1” FR4 Board.
See SOA curve for voltage derating.
DS
ti
150
150
(V)
t A bi
Ordering Information: SUD15N15-95
t
a
a
G
Top View
TO-252
J
J
0.095 @ V
= 175_C)
= 175_C)
0.100 @ V
D
Parameter
Parameter
r
N-Channel 150-V (D-S) 175_C MOSFET
DS(on)
S
b
b
GS
GS
(W)
= 10 V
= 6 V
Drain Connected to Tab
C
= 25_C UNLESS OTHERWISE NOTED)
T
Steady State
L = 0.1 mH
T
T
T
t v 10 sec
C
C
C
A
= 125_C
I
= 25_C
= 25_C
= 25_C
D
15
15
(A)
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
thJC
I
I
I
AR
thJA
DS
GS
AR
D
D
S
D
G
stg
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D 100% R
APPLICATIONS
D Primary Side Switch
D
S
Typical
16
45
2
g
Tested
- 55 to 175
Limit
"20
11.3
2.7 a
150
62
8.7
15
25
15
15
b
Maximum
Vishay Siliconix
SUD15N15-95
2.4
20
55
www.vishay.com
Unit
Unit
_C/W
mJ
_C
C/W
W
W
V
V
A
1

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SUD15N15-95-E3 Summary of contents

Page 1

... DS(on) 0.095 @ 150 150 0.100 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD15N15-95 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b b Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current ...

Page 2

... SUD15N15-95 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g b On-State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... V - Drain-to-Source Voltage (V) DS Document Number: 71641 S-31724—Rev. B, 18-Aug- 0. 55_C C 0.12 25_C 0.10 125_C 0.08 0.06 0.04 0.02 0. iss 12 80 100 SUD15N15-95 Vishay Siliconix Transfer Characteristics T = 125_C C 5 25_C Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current Drain Current (A) D Gate Charge ...

Page 4

... SUD15N15-95 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.4 D 2.0 1.6 1.2 0.8 0.4 0 Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 100 T - Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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