SUB65P04-15-E3 Vishay, SUB65P04-15-E3 Datasheet

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SUB65P04-15-E3

Manufacturer Part Number
SUB65P04-15-E3
Description
MOSFET Power 40V 65A 120W
Manufacturer
Vishay
Datasheet

Specifications of SUB65P04-15-E3

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
65 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
a.
b.
c.
Document Number: 71174
S-00831—Rev. A, 01-May-00
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
(T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
J
V
Duty cycle
When mounted on 1” square PCB (FR-4 material).
See SOA curve for voltage derating.
= 175 C)
DS
–40
–40
175 C)
(V)
TO-220AB
SUP65P04-15
Top View
G D S
1%.
0.023 @ V
0.015 @ V
a
r
DRAIN connected to TAB
DS(on)
P-Channel 40-V (D-S) 175 C MOSFET
GS
Parameter
Parameter
GS
= –4.5 V
( )
= –10 V
T
C
= 25 C (TO-220AB and TO-263)
PCB Mount (TO-263)
T
Free Air (TO-220AB)
A
= 25 C (TO-263)
T
L = 0.1 mH
T
C
C
= 125 C
= 25 C
I
New Product
D
–65
–50
(A)
SUB65P04-15
TO-263
G
Top View
b
b
D
S
Symbol
Symbol
T
R
R
R
J
V
V
E
I
I
P
P
, T
DM
thJC
I
I
AR
thJA
thJA
DS
GS
AR
D
D
D
D
stg
SUP/SUB65P04-15
www.vishay.com FaxBack 408-970-5600
–55 to 175
P-Channel MOSFET
Limit
Limit
Vishay Siliconix
G
–240
120
3.75
62.5
1.25
–40
–65
–37
–60
180
40
20
c
S
D
Unit
Unit
mJ
C/W
C/W
W
W
V
A
A
A
C
2-1

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SUB65P04-15-E3 Summary of contents

Page 1

... 0 (TO-220AB and TO-263 (TO-263 stg Symbol b PCB Mount (TO-263) R thJA Free Air (TO-220AB) R thJA R thJC SUP/SUB65P04-15 Vishay Siliconix P-Channel MOSFET Limit Unit – –65 – –240 –60 180 mJ c 120 W W 3.75 –55 to 175 C Limit Unit 40 62.5 C/W C/W 1.25 www ...

Page 2

... SUP/SUB65P04-15 Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage Z Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge ...

Page 3

... Drain-to-Source Voltage (V) DS Document Number: 71174 S-00831—Rev. A, 01-May-00 New Product 100 0. 0.03 125 C 0.02 0. 100 iss SUP/SUB65P04-15 Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 100 120 I – Drain Current (A) D Gate Charge ...

Page 4

... SUP/SUB65P04-15 Vishay Siliconix On-Resistance vs. Junction Temperature 2 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Avalanche Current vs. Time 1000 I ( 100 ( 150 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com FaxBack 408-970-5600 2-4 New Product 100 10 1 125 150 175 –50 0.1 ...

Page 5

... Document Number: 71174 S-00831—Rev. A, 01-May-00 New Product 1000 Limited by r 100 10 1 0.1 150 175 0.1 –2 – Square Wave Pulse Duration (sec) SUP/SUB65P04-15 Vishay Siliconix Safe Operating Area 10 s 100 s DS(on 100 Single Pulse 1 10 100 V – Drain-to-Source Voltage (V) ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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