ZXM66P02N8TA Diodes Inc, ZXM66P02N8TA Datasheet - Page 3

• Manufacturer Part Number: ZXM66P02N8TA
• Description: MOSFET Power 20V P-Chnl HDMOS
• Manufacturer: Diodes Inc

Specifications of ZXM66P02N8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
1E-3
0.01
0.01
Typical Transfer Characteristics
0.1
0.1
0.1
500.0m
10
On-Resistance v Drain Current
1
1
1
0.1
-V
T = 25°C
GS
-V
-V
0.1
Output Characteristics
DS
GS
-I
T = 150°C
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
1.5V
1.0
Drain Current (A)
1
10V
4.5V
1.5
1
T = 25°C
2V
-V
10
DS
T = 25°C
2.5V
= 10V
2.5V
2V
1.5V
-V
www.diodes.com
4.5V
10V
GS
2.0
3 of 5
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.1
10
10
1
1
-50
0.1
0.2
-V
-V
Tj Junction Temperature (°C)
Output Characteristics
DS
SD
T = 150°C
0
10V
Diodes Incorporated
Drain-Source Voltage (V)
Source-Drain Voltage (V)
0.4
A Product Line of
4.5V
1
V
I
D
50
GS
= -250uA
0.6
= V
2.5V
V
I
D
GS
DS
= - 3.2A
T = 25°C
= -4.5V
100
0.8
T = 150°C
ZXM66P02N8
10
R
V
1.5V
DS(on)
2V
GS(th)
-V
© Diodes Incorporated
1V
GS
150
1.0
October 2009