ZXMC3A16DN8TC Diodes Inc, ZXMC3A16DN8TC Datasheet

MOSFET Power Cmp 30V NP Ch UMOS

ZXMC3A16DN8TC

Manufacturer Part Number
ZXMC3A16DN8TC
Description
MOSFET Power Cmp 30V NP Ch UMOS
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMC3A16DN8TC

Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.05 Ohms
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
+ 6.4 / - 5.4 A
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC3A16DN8TC
Manufacturer:
ZETEX
Quantity:
20 000
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
P-Channel V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXMC
3A16
ISSUE 1 - OCTOBER 2005
DEVICE
ZXMC3A16DN8TA
ZXMC3A16DN8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor Drive
LCD backlighting
(BR)DSS
(BR)DSS
= -30V; R
= 30V; R
REEL
13’‘
7
’‘
WIDTH
12mm
12mm
TAPE
DS(ON)
DS(ON)
= 0.035 ; I
= 0.048 ; I
QUANTITY
2500 units
PER REEL
500 units
D
D
= 6.4A
1
= -5.4A
Q1 = N-CHANNEL
ZXMC3A16DN8
Top view
Q2 = P-CHANNEL
PINOUT
SO8

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ZXMC3A16DN8TC Summary of contents

Page 1

... Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMC3A16DN8TA 7 12mm ’‘ ZXMC3A16DN8TC 13’‘ 12mm DEVICE MARKING ZXMC 3A16 ISSUE 1 - OCTOBER 2005 = 0.035 ; 0.048 ; I = -5. N-CHANNEL QUANTITY PER REEL ...

Page 2

ZXMC3A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a)(d) Power Dissipation ...

Page 3

ISSUE 1 - OCTOBER 2005 ZXMC3A16DN8 CHARACTERISTICS 3 ...

Page 4

ZXMC3A16DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING ...

Page 5

P-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING ...

Page 6

ZXMC3A16DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10V T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25° Gate-Source Voltage (V) GS Typical Transfer ...

Page 7

N-CHANNEL TYPICAL CHARACTERISTICS 1200 1000 800 C ISS C 600 OSS 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage ISSUE 1 - OCTOBER 2005 3.5A ...

Page 8

ZXMC3A16DN8 P-CHANNEL TYPICAL CHARACTERISTICS 10V 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25° Gate-Source Voltage (V) GS Typical Transfer ...

Page 9

P-CHANNEL TYPICAL CHARACTERISTICS 1400 1200 1000 C 800 ISS C OSS 600 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage ISSUE 1 - OCTOBER 2005 ...

Page 10

ZXMC3A16DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 H 5.80 6.20 0.228 0.244 ...

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