IRF9530SPBF Vishay, IRF9530SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF9530SPBF
• Description: MOSFET Power P-Chan 100V 12 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9530SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.7 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.3Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 12A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: SMD-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91077
S10-1728-Rev. B, 02-Aug-10
91077_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91077_11
12
10
8
6
4
0
2
25
10
0.1
10
-2
1
10
50
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
T
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
125
Single Pulse
(Thermal Response)
150
10
t
-3
1
, Rectangular Pulse Duration (s)
175
10
-2
0.1
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
IRF9530S, SiHF9530S
Notes:
1. Duty Factor, D = t
2. Peak T
GS
t
d(on)
V
DS
t
r
1
j
= P
P
DM
DM
D.U.T.
x Z
t
1
R
1
Vishay Siliconix
thJC
/t
D
2
t
d(off)
t
+ T
2
C
10
t
f
+
-
www.vishay.com
V
DD
5