FDMC2514SDC Fairchild Semiconductor, FDMC2514SDC Datasheet - Page 7

• Manufacturer Part Number: FDMC2514SDC
• Description: MOSFET Power 25V NChan Dual Cool PowerTrench SyncFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC2514SDC

• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Forward Transconductance Gfs (max / Min): 122 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 24 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC2514SDC Rev.C2
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 13 shows the reverse recovery
characteristic of the FDMC2514SDC.
diode reverse recovery characteristic
Figure 14. FDMC2514SDC SyncFET body
25
20
15
10
-5
5
0
0
50
TIME (ns)
di/dt = 300 A/
100
(continued)
μ
s
150
200
7
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
-2
-3
-4
-5
-6
0
Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage
5
V
DS
, REVERSE VOLTAGE (V)
10
T
J
= 25
T
J
T
= 100
J
o
C
= 125
15
o
C
o
C
20
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