ZXTN25040DFHTA Diodes Inc, ZXTN25040DFHTA Datasheet - Page 4

• Manufacturer Part Number: ZXTN25040DFHTA
• Description: Bipolar Small Signal NPN 40V HIGH GAIN
• Manufacturer: Diodes Inc

Specifications of ZXTN25040DFHTA

• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 4 A
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 1.25 W
• Maximum Operating Frequency: 190 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics (at T
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
(*) Measured under pulsed conditions. Pulse width
NOTES:
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current I
Collector-emitter cut-off
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Base-emitter turn-on voltage V
Static forward current
transfer ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
BV
BV
BV
BV
BV
BV
I
I
V
V
h
f
C
t
t
t
t
CBO
CEX
EBO
T
d
r
s
f
FE
CE(sat)
BE(sat)
BE(on)
OBO
CBO
CEX
CEO
EBO
ECX
ECO
amb
= 25°C unless otherwise stated)
Min.
300 s; duty cycle
130
130
300
300
40
30
7
6
6
4
Typ.
11.7
170
170
120
135
140
960
840
450
450
190
108
428
130
8.3
7.4
7.4
63
<1
<1
45
60
10
64
-
Max.
1050
100
210
210
190
950
900
50
20
50
55
20
2%.
MHz I
Unit Conditions
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
ns
ns
ns
V
V
V
V
V
V
A
ZXTN25040DFH
I
I
-1V < V
I
I
I
0.25V > V
I
V
V
V
or
-1V < V
V
I
I
I
I
I
I
I
I
I
I
f = 100MHz
V
V
I
I
C
C
C
E
E
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CE
EB
CB
CC
= 100 A, R
= 100 A; R
= 10mA
= 100 A
= 100 A,
= 1A, I
= 1A, I
= 2A, I
= 4A, I
= 4A, I
= 4A, V
= 10mA, V
= 1A, V
= 4A, V
= 10A, V
= 50mA, V
= 1A,
= 100 A
= I
= 100V, T
= 5.6V
= 100V
= 100V; R
= 10V, f = 1MHz
= 10V,
B2
BE
BE
= 10mA
www.zetex.com
B
B
B
B
B
BC
CE
CE
CE
< 0.25V
= 100mA
= 10mA
= 40mA
= 400mA
= 400mA
(*)
< 0.25V
CE
= 2V
= 2V
= 2V
CE
CE
> -0.25V
BC
amb
BE
= 2V
BE
= 2V
= 10V
< 1k or
< 1k or
< 1k
(*)
(*)
(*)
= 100°C
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)