HN7G01FE-A(TE85L,F Toshiba, HN7G01FE-A(TE85L,F Datasheet

HN7G01FE-A(TE85L,F

Manufacturer Part Number

HN7G01FE-A(TE85L,F

Description

Bipolar Small Signal Vceo=-12V Vds=20V Ic=-400mA Id=50mA

Manufacturer

Toshiba

Datasheet

1.HN7G01FE-ATE85LF.pdf (7 pages)

Specifications of HN7G01FE-A(TE85L,F

Dc Collector/base Gain Hfe Min

300

Configuration

Dual

Transistor Polarity

PNP

Mounting Style

Through Hole

Package / Case

2-2N1F

Collector- Emitter Voltage Vceo Max

- 12 V

Emitter- Base Voltage Vebo

- 5 V

Continuous Collector Current

- 400 mA

Power Dissipation

100 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power Management Switch Applications

Driver Circuit Applications

Interface Circuit Applications

•

Q1, Q2 Common Ratings

Marking

Q1 (transistor): 2SA1955 equivalent

Q2 (MOSFET): SSM3K03FE equivalent

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Drain-source voltage

Gate-source voltage

Drain current

Power dissipation

Junction temperature

Storage temperature range

Note:

Note 1: Total rating

(Transistor)

(MOSFET)

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

Absolute Maximum Ratings

Type Name

Rank

(Ta = 25°C)

TOSHIBA Multichip Discrete Device

Symbol

P (Note 1)

Symbol

HN7G01FE

stg

CBO

CEO

EBO

GSS

−55~125

Rating

−400

−15

−12

−50

100

125

−5

(Ta = 25°C)

Pin Assignment

Unit

°C

Weight: 0.003 g (typ.)

(top view)

JEDEC

JEITA

TOSHIBA

EMITTER

BASE

DRAIN

SOURCE

GATE

COLLECTOR

HN7G01FE

2-2N1F

2007-11-01

―

Unit: mm

Related parts for HN7G01FE-A(TE85L,F

HN7G01FE-A(TE85L,F Summary of contents

Page 1

... C − (Ta = 25°C) Symbol Rating Unit GSS (Ta = 25°C) Symbol Rating Unit P (Note 1) 100 mW T 125 j −55~125 T stg Pin Assignment 1 HN7G01FE EMITTER 2. BASE 3. DRAIN 4. SOURCE 5. GATE 6. COLLECTOR JEDEC ― V JEITA ― V TOSHIBA 2-2N1F Weight: 0.003 g (typ.) °C °C (top view ...

Page 2

... V off ( OUT D.U. < < Ω) (Z out Common source ( 25°C OUT HN7G01FE Min Typ. Max ⎯ ⎯ −0.1 ⎯ ⎯ −0.1 ⎯ 300 1000 ⎯ −15 −30 ⎯ −110 −250 ⎯ −0.87 −1.2 Min Typ. Max ⎯ ⎯ 1 ⎯ ⎯ 20 ⎯ ...

Page 3

... Q1 (Transistor) 3 HN7G01FE 2007-11-01 ...

Page 4

... Q2 (S-MOS) 4 HN7G01FE 2007-11-01 ...

Page 5

... Q2 (S-MOS) 5 HN7G01FE 2007-11-01 ...

Page 6

... Q1, Q2 Common * P – Ta 200 150 100 100 AMBIENT TEMPERATURE Ta (°C) *:Total rating 125 150 175 6 HN7G01FE 2007-11-01 ...

Page 7

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 HN7G01FE 2007-11-01 ...

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