FCX495TA Diodes Inc, FCX495TA Datasheet

Bipolar Small Signal NPN Medium Power

FCX495TA

Manufacturer Part Number
FCX495TA
Description
Bipolar Small Signal NPN Medium Power
Manufacturer
Diodes Inc
Datasheet
1.FCX495TA.pdf (6 pages)

Specifications of FCX495TA

Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-89
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
1 W
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FCX495TA
Manufacturer:
ZETEX
Quantity:
17 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
FCX495TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
FCX495TA
Quantity:
2 646
FCX495
SOT89 NPN silicon planar high voltage transistor
Features
•
•
Device marking
N95
Absolute maximum ratings
Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
Issue 4 - May 2007
© Zetex Semiconductors plc 2007
NOTES:
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Base current
Power dissipation at T
Operating and storage temperature range
Parameter
Breakdown voltages
Collector cut-off currents
Emitter cut-off current
Emitter saturation voltages
Base-emitter turn on voltage
Static forward current transfer
ratio
Transition frequency
Collector-base breakdown voltage
150 Volt V
1 Amp continuous current
CEO
amb
= 25°C
Symbol
V
V
V
I
I
V
V
V
h
f
C
CBO
EBO
T
FE
(BR)CBO
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
, I
CES
= 25°C)
Min.
170
150
100
100
100
C
50
10
5
1
Pinout - top view
Symbol
Max.
100
100
300
T
0.2
0.3
1.0
1.0
V
V
V
10
P
j
I
:T
CBO
CEO
EBO
CM
I
I
tot
B
C
stg
2%
Unit
MHz I
nA
nA
pF
V
V
V
V
V
V
V
C
B
E
-65 to +150
Conditions
I
I
I
V
V
I
I
I
I
I
I
I
I
f=100MHz
V
C
C
E
C
C
C
C
C
C
C
C
C
CB
EB
CB
=100µA
=100µA
=10mA
=250mA, I
=500mA, I
=500mA, I
=500mA, V
=1mA, V
=250mA, V
=500mA, V
=1A, V
=50mA, V
Value
170
150
200
=4V
=150V, V
=10V, f=1MHz
5
1
2
1
CE
(*)
CE
=10V
CE
B
B
B
CE
=10V
CE
CE
CE
www.zetex.com
=25mA
=50mA
=50mA
=10V
=150V
=10V
=10V
=10V
(*)
Unit
mA
(*)
(*)
(*)
(*)
(*)
(*)
W
°C
V
V
V
A
A

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FCX495TA Summary of contents

Page 1

FCX495 SOT89 NPN silicon planar high voltage transistor Features • 150 Volt V CEO • 1 Amp continuous current Device marking N95 Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current ...

Page 2

Typical characteristics Issue 4 - May 2007 © Zetex Semiconductors plc 2007 2 FCX495 www.zetex.com ...

Page 3

Typical characteristics 0.4 +25° 0.2 0.1 0 1mA 10mA 100mA I - Collector current C V CS(sat) 320 V =10V CE +100°C 240 +25°C 160 -55° 1mA ...

Page 4

Issue 4 - May 2007 © Zetex Semiconductors plc 2007 Intentionally left blank 4 FCX495 www.zetex.com ...

Page 5

Package outline - SOT89 DIM Millimeters Min Max A 1.40 1.60 B 0.44 0.56 B1 0.36 0.48 C 0.35 0.44 D 4.40 4.60 D1 1.52 1.83 Note: Controlling dimensions are in millimeters. Approximate dimensions ...

Page 6

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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