ZXTN618MATA Diodes Inc, ZXTN618MATA Datasheet - Page 2

• Manufacturer Part Number: ZXTN618MATA
• Description: Bipolar Small Signal BIPOLAR TRANSISTOR NPN
• Manufacturer: Diodes Inc

Specifications of ZXTN618MATA

• Dc Collector/base Gain Hfe Min: 100
• Gain Bandwidth Product Ft: 140 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: DFN2020B-3
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 7.5 V
• Continuous Collector Current: 5 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
ZXTN618MA
Document Number DS31890 Rev. 5 – 2
3. For a device surface mounted on 31mm x 31mm (10cm
4. Same as note (3), except the device is measured at t ≤ 5 sec.
5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
Characteristic
Parameter
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 5)
2
) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
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Symbol
Symbol
T
V
V
J,
V
R
R
I
P
CBO
CEO
EBO
CM
I
I
T
θ JA
θ JL
C
B
D
STG
Diodes Incorporated
A Product Line of
-55 to +150
Value
Limit
2.45
19.6
16.8
4.5
1.5
40
20
12
12
83
51
7
5
1
ZXTN618MA
© Diodes Incorporated
January 2011
mW/°C
°C/W
Unit
Unit
W
°C
V
A