ZXTD4591E6TA Diodes Inc, ZXTD4591E6TA Datasheet - Page 3

• Manufacturer Part Number: ZXTD4591E6TA
• Description: Bipolar Small Signal Dual 60V NPN/PNP
• Manufacturer: Diodes Inc

Specifications of ZXTD4591E6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-6
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: - 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1700 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Module Configuration: Dual
• Collector Emitter Voltage V(br)ceo: 60V
• Power Dissipation Pd: 1.1W
• Dc Collector Current: 1A
• Dc Current Gain Hfe: 100
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
ISSUE 1 - JULY 2000
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
CBO
EBO
CES
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
-80
-60
-5
100
100
150
= 25°C unless otherwise stated).
80
15
3
TYP.
MAX.
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
300
10
UNIT
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
ZXTD4591E6
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
f=100MHz
V
C
C
E
C
C
C
C
C
C
C
C
C
CB
EB
CES
CB
=-100 A
=-100 A
=-10mA*
=-500mA, I
=-1A, I
=-1A, I
=-1A, V
=-1mA, V
=-500mA, V
=-1A, V
=-2A, V
=-50mA, V
=-60V
=-4V
=-10V, f=1MHz
=-60V
B
B
CE
CE
CE
=-100mA*
=-100mA*
CE
=-5V*
=-5V*
=-5V*
CE
B
=-5V*
CE
=-50mA*
=-10V
=-5V*