2SA1832-GR(T5L,F,T Toshiba, 2SA1832-GR(T5L,F,T Datasheet
2SA1832-GR(T5L,F,T
Manufacturer Part Number
2SA1832-GR(T5L,F,T
Description
Bipolar Small Signal -150mA -0.3V
Manufacturer
Toshiba
Datasheet
1.2SA1832-GRT5LFT.pdf
(3 pages)
Specifications of 2SA1832-GR(T5L,F,T
Dc Collector/base Gain Hfe Min
200
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 150 mA
Power Dissipation
100 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: V
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
Excellent h
High h
Complementary to 2SC4738
Small package
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
( ) marking symbol
FE:
FE
Characteristics
Characteristics
h
classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
FE
FE
linearity: h
= 70~400
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
= 0.95 (typ.)
FE
(I
CEO
C
(Ta = 25°C)
= −0.1 mA)/ h
= −50 V, I
(Ta = 25°C)
V
Symbol
Symbol
V
V
V
CE (sat)
I
I
T
CBO
EBO
h
C
P
CBO
CEO
EBO
I
I
T
f
stg
FE
C
B
T
ob
C
2SA1832
j
(Note)
C
= −150 mA (max)
FE
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
(I
= −100 mA, I
−55~125
C
Rating
= −50 V, I
= −5 V, I
= −6 V, I
= −10 V, I
= −10 V, I
−150
−50
−50
−30
100
125
−5
= −2 mA)
1
Test Condition
C
C
E
C
E
= 0
= −2 mA
B
= 0
= 0, f = 1 MHz
= −1 mA
= −10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 2.4 mg (typ.)
JEDEC
JEITA
TOSHIBA
Min
70
80
⎯
⎯
⎯
⎯
Typ.
−0.1
⎯
⎯
⎯
⎯
4
2-2H1A
2007-11-01
―
―
2SA1832
−0.1
−0.1
−0.3
Max
400
⎯
7
Unit: mm
MHz
Unit
μA
μA
pF
V
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2SA1832-GR(T5L,F,T Summary of contents
Page 1
... − − MHz Unit °C °C JEDEC ― JEITA ― TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Min Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 70 ⎯ −0.1 ⎯ 80 ⎯ 4 2007-11-01 2SA1832 Unit: mm Max Unit −0.1 μA −0.1 μA 400 −0.3 V ⎯ MHz 7 pF ...
Page 2
... 2 2SA1832 2007-11-01 ...
Page 3
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SA1832 2007-11-01 ...