2N6384 Central Semiconductor, 2N6384 Datasheet

Bipolar Power NPN Pwr Darlington

2N6384

Manufacturer Part Number
2N6384
Description
Bipolar Power NPN Pwr Darlington
Manufacturer
Central Semiconductor
Datasheet

Specifications of 2N6384

Continuous Collector Current
0.45 A
Minimum Operating Temperature
- 65 C
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-3
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Power Dissipation
100 W
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
MAXIMUM RATINGS: (T C =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T C =25°C unless otherwise noted)
SYMBOL
I CEV
I CEV
I CEO
I EBO
BV CEO
BV CEO
BV CEO
BV CER
BV CER
BV CER
BV CEV
BV CEV
BV CEV
DARLINGTON TRANSISTOR
NPN SILICON POWER
TEST CONDITIONS
V CEV =Rated V CEO , V BE(off) =1.5V
V CEV =Rated V CEO , V BE(off) =1.5V, T C =150°C
V CE =Rated V CEO
V EB =5.0V
I C =200mA (2N6383)
I C =200mA (2N6384)
I C =200mA (2N6385)
I C =200mA, R BE =100Ω (2N6383)
I C =200mA, R BE =100Ω (2N6384)
I C =200mA, R BE =100Ω (2N6385)
I C =200mA, V BE(off) =1.5V (2N6383)
I C =200mA, V BE(off) =1.5V (2N6384)
I C =200mA, V BE(off) =1.5V (2N6385)
TO-3 CASE
2N6383
2N6384
2N6385
MARKING: FULL PART NUMBER
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3683 SERIES
types are NPN Silicon Power Darlington Transistors
designed for power amplifier applications.
SYMBOL
T J , T stg
V CBO
V CEO
V EBO
V CEX
Θ JC
I CM
P D
I C
I B
Central
Semiconductor Corp.
MIN
40
60
80
40
60
80
40
60
80
2N6383
40
40
40
-65 to +200
2N6384
MAX
1.75
250
100
300
5.0
3.0
1.0
60
60
60
10
15
10
2N6385
R1 (28-August 2008)
80
80
80
TM
UNITS
mA
mA
mA
μA
V
V
V
V
V
V
V
V
V
UNITS
°C/W
mA
°C
W
V
V
V
V
A
A

Related parts for 2N6384

2N6384 Summary of contents

Page 1

... BV CER I C =200mA =100Ω (2N6384) BV CER I C =200mA =100Ω (2N6385) BV CEV I C =200mA, V BE(off) =1.5V (2N6383) BV CEV I C =200mA, V BE(off) =1.5V (2N6384) BV CEV I C =200mA, V BE(off) =1.5V (2N6385) Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications ...

Page 2

... V CE =5.0V =1.0A, f=1.0MHz =5.0V =1.0A, f=1.0kHz TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter C) Collector MARKING: FULL PART NUMBER TM NPN SILICON POWER DARLINGTON TRANSISTOR MIN MAX 2.0 3.0 2.8 4.5 1K 20K 100 4.0 200 2N6383 2N6384 2N6385 UNITS (28-August 2008) ...

Related keywords