FZT951TA Diodes Inc, FZT951TA Datasheet

Bipolar Power PNP HighCt Low Sat

FZT951TA

Manufacturer Part Number
FZT951TA
Description
Bipolar Power PNP HighCt Low Sat
Manufacturer
Diodes Inc
Datasheet
1.FZT951.pdf (5 pages)

Specifications of FZT951TA

Maximum Operating Frequency
120 MHz
Minimum Operating Temperature
- 55 C
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-223
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 6 V
Maximum Dc Collector Current
5 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation Pd
3W
Dc Collector Current
6A
Dc Current Gain Hfe
200
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FZT951TA
Manufacturer:
ZETEX
Quantity:
312
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
FZT951TA
Manufacturer:
ZETEX
Quantity:
20 000
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - APRIL 2000
FEATURES
*
*
*
*
*
COMPLEMENTARY TYPES - FZT951 = FZT851
PARTMARKING DETAILS -
ABSOLUTE MAXIMUM RATINGS.
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature
Range
5 Amps continuous current , up to 15 Amps peak current
Very low saturation voltages
Excellent gain characteristics specified up to 10 Amps
P
FZT951 exhibts extremely low equivalent on resistance;
R
tot
CE(sat)
= 3 watts
55m

at 4A
amb
=25°C
FZT953 = FZT853
DEVICE TYPE IN FULL
SYMBOL
V
V
V
I
I
P
T
CM
C
tot
j
CBO
CEO
EBO
:T
3 - 279
stg
FZT951
-100
-60
-15
-55 to +150
-6
-5
3
FZT953
-140
-100
-10
C
FZT951
FZT953
B
UNIT
W
°C
V
V
V
A
A
C
E

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FZT951TA Summary of contents

Page 1

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , Amps peak current * Very low saturation voltages * Excellent gain characteristics specified ...

Page 2

FZT951 ELECTRICAL CHARACTERISTICS (at T PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer ...

Page 3

TYPICAL CHARACTERISTICS 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0 Collector Current (Amps CE(sat) C +100°C +25°C 1.6 -55°C 1.4 ...

Page 4

FZT953 ELECTRICAL CHARACTERISTICS (at T PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer ...

Page 5

TYPICAL CHARACTERISTICS 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0 Collector Current (Amps CE(sat) C +100°C 1.6 +25°C -55°C ...

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