DXT2010P5-13 Diodes Inc, DXT2010P5-13 Datasheet - Page 4

• Manufacturer Part Number: DXT2010P5-13
• Description: Bipolar Power BIPOLAR TRANS,NPN 60V,6A
• Manufacturer: Diodes Inc

Specifications of DXT2010P5-13

• Continuous Collector Current: 6 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 130 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: PowerDI-5
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 20 A
• Power Dissipation: 0.74 W
• Maximum Operating Temperature: + 150 C
• Collector Emitter Voltage V(br)ceo: 60V
• Transition Frequency Typ Ft: 130MHz
• Power Dissipation Pd: 3.2W
• Dc Collector Current: 6A
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
DC Current Gain (Note 6)
Transition Frequency
Output Capacitance (Note 7)
Switching Times
PowerDI is a registered trademark of Diodes Incorporated.
Notes:
DXT2010P5
Document number: DS32011 Rev. 2 - 2
7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
V
R≤1kΩ
V
(BR)CBO
(BR)CEO
(BR)EBO
I
C
I
I
CE(sat)
BE(sat)
BE(on)
h
www.diodes.com
CBO
CER
EBO
t
t
f
obo
on
off
FE
T
4 of 7
Min
150
100
100
7.0
60
55
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1000
Typ
190
100
210
940
200
200
105
130
760
8.1
80
⎯
⎯
⎯
20
45
50
40
31
42
1100
1050
Max
135
260
300
0.5
0.5
20
20
10
30
60
70
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diodes Incorporated
A Product Line of
Unit
MHz
mV
mV
mV
nA
μA
nA
μA
nA
pF
⎯
ns
ns
V
V
V
I
I
I
V
V
V
V
V
I
I
I
I
I
I
V
I
I
I
I
I
f = 50MHz
V
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CE
CB
= 100μA
= 100mA, I
= 1A, I
= 10mA, V
= 2A, V
= 100μA
= 10mA
= 1A, I
= 2A, I
= 6A, I
= 6A, I
= 5A, V
= 10A, V
= 100mA, V
= 1A, V
= I
= 120V
= 120V, T
= 120V
= 120V, T
= 6V
= 1V, I
= -10A, f = 1MHz
B2
= 100mA
B
B
B
B
B
CE
Test Condition
CE
CC
= 100mA
= 50mA
= 50mA
= 300mA
= 300mA
C
CE
= 1V
= 6A
CE
= 1V
= 10V,
B
= 1V
amb
amb
DXT2010P5
CE
= 5mA
= 1V
= 10V
= 100 °C
= 100 °C
© Diodes Incorporated
March 2010