FZT953TA Diodes Inc, FZT953TA Datasheet - Page 2

• Manufacturer Part Number: FZT953TA
• Description: Bipolar Power PNP HighCt Low Sat
• Manufacturer: Diodes Inc

Specifications of FZT953TA

• Maximum Operating Frequency: 125 MHz
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: - 6 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Collector Emitter Voltage V(br)ceo: 100V
• Power Dissipation Pd: 3W
• Dc Collector Current: 6A
• Dc Current Gain Hfe: 200
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width =300
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
FZT951
SYMBOL
V
V
V
V
I
I
R
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
on
off
FE
(BR)CBO
(BR)CER
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo

1 k

MIN.
-100
-100
-60
-6
100
100
75
10
3 - 280
amb
= 25°C unless otherwise stated)
TYP.
-140
-140
-90
-8
-20
-85
-155
-370
-1080
-935
200
200
90
25
120
74
82
350


s . duty cycle
MAX.
-50
-1
-50
-1
-10
-50
-140
-210
-460
-1240
-1070
300

2%
UNIT
V
V
V
V
nA


nA


nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
A
A
CONDITIONS.
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B2
=-100
CB
CB
CB
CB
EB
CB
=-100
=-10mA*
=-100mA, I
=-1A, I
=-2A, I
=-5A, I
=-5A, I
=-10mA, V
=-2A, V
=-5A, V
=-10A, V
=-100mA, V
=-2A, I
=-1
=-5A, V
=200mA, V
=-6V
=-80V
=-80V, T
=-80V
=-80V, T
=-10V, f=1MHz


A , RB




B
B
B
B
B1
A
A
CE
CE
=-100mA*
=-200mA*
=-500mA*
=-500mA*
CE
=-200mA
CE
=-1V*
=-1V*
=-1V*
 
amb
amb
=-1V*
CE
B
CE
1 k
=-10mA*
CC
=-1V*
=100°C
=100°C
=-10V
=-10V