NESG4030M14-A CEL, NESG4030M14-A Datasheet

RF Germanium Low Noise, SiGe: C HBT 2V,6mA@5.8GHz

NESG4030M14-A

Manufacturer Part Number
NESG4030M14-A
Description
RF Germanium Low Noise, SiGe: C HBT 2V,6mA@5.8GHz
Manufacturer
CEL
Datasheet

Specifications of NESG4030M14-A

Continuous Collector Current
35 mA
Mounting Style
SMD/SMT
Power Dissipation
105 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NESG4030M14-A
Manufacturer:
CEL
Quantity:
120
Document No. PU10728EJ02V0DS (2nd edition)
Date Published August 2009 NS
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
• Maximum stable power gain: MSG = 15 dB TYP. @ V
• SiGe:C HBT technology (UHS4) adopted
• Improvement of ESD protection
• 4-pin lead-less minimold (M14, 1208 PKG)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG4030M14
NESG4030M14-T3 NESG4030M14-T3-A
Collector to Base Voltage
Collector to Emitter Voltage
Base Current
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, please contact your nearby sales office.
Notes 1. V
NF = 1.1 dB TYP., G
Part Number
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2. Mounted on 1.08 cm
Unit sample quantity is 50 pcs.
Parameter
CBO
and I
NESG4030M14-A
Order Number
B
a
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
are limited by the permissible current of the protection element.
= 11.5 dB TYP. @ V
LOW NOISE, HIGH-GAIN AMPLIFICATION
NPN SiGe:C RF TRANSISTOR FOR
2
NPN SILICON GERMANIUM C RF TRANSISTOR
× 1.0 mm (t) glass epoxy PWB
V
P
Symbol
CBO
I
B
V
tot
T
Note 1
CEO
I
T
Note 2
C
stg
The mark <R> shows major revised points.
4-pin lead-less minimold
(M14, 1208 PKG)
(Pb-Free)
Note 1
j
A
= +25°C)
CE
Package
= 2 V, I
−65 to +150
Ratings
C
CE
105
150
5.0
3.0
= 6 mA, f = 5.8 GHz
12
35
= 2 V, I
50 pcs
(Non reel)
10 kpcs/reel
C
Quantity
= 20 mA, f = 5.8 GHz
NESG4030M14
Unit
mW
mA
mA
°C
°C
V
V
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Supplying Form
2008, 2009

Related parts for NESG4030M14-A

NESG4030M14-A Summary of contents

Page 1

... Improvement of ESD protection • 4-pin lead-less minimold (M14, 1208 PKG) ORDERING INFORMATION Part Number Order Number NESG4030M14 NESG4030M14-A NESG4030M14-T3 NESG4030M14-T3-A Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T Parameter Collector to Base Voltage ...

Page 2

... Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the ESD protection element is turned on when recommended range of motion in the above table is exceeded. However, there is no influence of reliability, including deterioration +25°C) A MIN. TYP. MAX. Unit − − 3 dBm in − − 150 kΩ Data Sheet PU10728EJ02V0DS NESG4030M14 ...

Page 3

... CB E Note MSG mA 5.8 GHz mA (set dB 5.8 GHz Sopt L Lopt μ s, Duty Cycle ≤ 2% Data Sheet PU10728EJ02V0DS NESG4030M14 MIN. TYP. MAX. Unit − − 100 nA − − 100 nA − 270 400 540 − 8.5 10.5 dB − 1.1 1.5 dB − 9.5 11.5 dB − ...

Page 4

... A 100 10 1 0.1 0.01 0.001 0.0001 0.8 1 0.4 (V) BE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0 (V) BE Data Sheet PU10728EJ02V0DS NESG4030M14 MHz Collector to Base Voltage V (V) CB COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.6 0.8 1 Base to Emitter Voltage V (V) BE μ 180 A μ 160 A μ ...

Page 5

... Remark The graphs indicate nominal characteristics. DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 100 0.1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 100 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 100 1 Data Sheet PU10728EJ02V0DS NESG4030M14 100 Collector Current I (mA 100 Collector Current I (mA 100 Collector Current I (mA ...

Page 6

... INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 2.4 GHz 100 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT 2.4 GHz 100 1 Data Sheet PU10728EJ02V0DS NESG4030M14 MAG MAG MSG 2 | 21e 10 100 Frequency f (GHz) MSG MAG 21e 10 100 Collector Current I (mA) C MSG 21e 10 100 Collector Current I (mA) C ...

Page 7

... INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 5.8 GHz 25 20 MSG 100 1 Collector Current I INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 5.8 GHz 25 20 MSG 100 1 Collector Current I Data Sheet PU10728EJ02V0DS NESG4030M14 MSG MAG 21e 10 100 (mA) C MAG 21e 10 100 (mA) C MAG 21e 10 100 (mA ...

Page 8

... URL http://www.necel.com/microwave/en/ 8 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 5.8 GHz , –5 0 – –15 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 2.4 GHz 100 1 (mA) Data Sheet PU10728EJ02V0DS NESG4030M14 = (set) P out I C –10 –5 – Input Power P (dBm 5.8 GHz 100 Collector Current I (mA ...

Page 9

... PACKAGE DIMENSIONS <R> 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm) (Top View) (Bottom View) 1.0±0.05 +0.07 0.8 –0.05 0.1 0.2 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Data Sheet PU10728EJ02V0DS NESG4030M14 0.6 9 ...

Page 10

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NESG4030M14 Please check with an NEC Electronics sales M8E0904E ...

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