MOC3083M Fairchild Semiconductor, MOC3083M Datasheet
MOC3083M
Specifications of MOC3083M
Available stocks
Related parts for MOC3083M
MOC3083M Summary of contents
Page 1
... SUBSTRATE) ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in ...
Page 2
... Note: 1. Isolation surge voltage internal device dielectric breakdown rating. For this test, Pins 1 and 2 are ISO common, and Pins 4, 5 and 6 are common. ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0 25°C unless otherwise noted) A Parameters (1) (peak AC voltage, 60Hz, 1 sec. duration) ...
Page 3
... Test Conditions I = Rated Rated DRM off state Test Conditions ( 60Hz sec. value less than or equal to max I F (15mA for MOC3081M, 10mA for MOC3082M, 5mA for MOC3083M) and FT 3 Min. Typ.* Max. 1.3 1.5 0.005 100 10 500 600 1500 Device Min. Typ.* Max ...
Page 4
... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 4 Min. Typ. Max. ...
Page 5
... LED Pulse Width NORMALIZED TO PW >> 100 LED TRIGGER PULSE WIDTH ( s) IN ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 10 100 -40 Figure 4. Leakage Current, I DRM vs. Temperature 10000 1000 100 10 1 0.1 -40 100 5 Figure 2 ...
Page 6
... A Figure Holding Current vs. Temperature H 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -40 - AMBIENT TEMPERATURE ( ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 (Continued) 800 = 25 C 600 400 200 0 -200 -400 -600 -800 100 1.20 1.15 1.10 1.05 1.00 0.95 ...
Page 7
... The load may be connected to either the neutral or hot line calculated so that I is equal to the rated and 5mA for the MOC3083M. The 39 resistor and 0.01µF capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load use For highly inductive loads (power factor < ...
Page 8
... Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...
Page 9
... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 Order Entry Identifier (Example) MOC3081M ...
Page 10
... C 140 120 100 ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 10 Ø1.5 MIN 1 ...
Page 11
... Datasheet Product Status Identification Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 Power-SPM ® ® PowerTrench SM PowerXS™ Programmable Active Droop ® QFET e-Series QS Quiet Series RapidConfigure Saving our world, 1mW/W/ time™ ...