H11AA1SR2M Fairchild Semiconductor, H11AA1SR2M Datasheet - Page 5

• Manufacturer Part Number: H11AA1SR2M
• Description: Transistor Output Optocouplers MOT AC IN-TRANS OUT
• Manufacturer: Fairchild Semiconductor

Specifications of H11AA1SR2M

• Maximum Input Diode Current: 60 mA
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: AC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 5250 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP SMD White
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
Typical Performance Characteristics
-100
100
-20
-40
-60
-80
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
60
40
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-2.0
10
-60
Fig. 3 Normalized CTR vs. Ambient Temperature
V
T
I
T
V
Normalized to I
F
A
CE
A
CE
= 20mA
= 25 C
-1.5
Fig. 1 Input Voltage vs. Input Current
= 25 C
-40
= 0.3V
= 5V
Fig. 5 CTR vs. RBE (Saturated)
-1.0
-20
T
R
A
F
BE
– AMBIENT TEMPERATURE ( C)
= 10mA, T
V
- BASE RESISTANCE (k
F
-0.5
– INPUT VOLTAGE (V)
0
I
F
I
I
F
F
= 10mA
= 20mA
= 5mA
A
0.0
100
= 25 C
20
I
F
= 5mA
0.5
40
I
F
1.0
= 10mA
60
1.5
80
2.0
1000
100
5
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
0.001
0.01
100
0.1
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
0.01
10
0
T
T
V
V
T
A
A
I
CE
A
F
CE
= 25 C
Fig. 2 Normalized CTR vs. Forward Current
= 25 C
= 20mA
= 25 C
= 5V
= 5V
Fig. 4 CTR vs. RBE (Unsaturated)
5
I
I
C
F
I
R
- COLLECTOR CURRENT (mA)
F
– FORWARD CURRENT (mA)
BE
= 2.5mA
0.1
– BASE RESISTANCE (k
I
F
100
10
= 10mA
I
I
F
F
= 5mA
= 5mA
Normalized to I
I
I
F
F
1
= 20mA
= 10mA
15
F
= 10mA
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20
1000
10