TLP621-2GRFT Toshiba, TLP621-2GRFT Datasheet - Page 4

• Manufacturer Part Number: TLP621-2GRFT
• Description: Transistor Output Optocouplers X36 PHOTOCOUPLER
• Manufacturer: Toshiba

Specifications of TLP621-2GRFT

• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 2
• Input Type: DC
• Maximum Collector Emitter Voltage: 55 V
• Maximum Collector Emitter Saturation Voltage: 200 mV (Typ)
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Package / Case: PDIP-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Recommended Operating Conditions
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation derating
(Ta ≥ 25°C)
Isolation voltage
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.
Supply voltage
Forward current
Collector current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Forward current
Forward current derating
Pulse forward current
Power dissipation
Power dissipation derating
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation derating
(1 circuit, Ta ≥ 25°C)
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
Characteristic
(Note 1)
(Ta = 25°C)
ΔP
ΔP
ΔP
Symbol
ΔI
V
V
T
BV
T
T
I
P
V
P
F
CEO
ECO
P
D
I
C
T
I
FP
T
T
stg
opr
sol
C
F
D
R
C
T
/°C
j
j
/°C
S
/°C
/°C
Symbol
V
T
I
I
opr
CC
C
F
−0.7 (Ta > 39°C)
4
TLP621
5000 (AC, 1min., R.H.≤ 60%)
Min.
−25
―
―
―
−1.0
−1.5
−2.5
100
150
250
1 (100μs pulse, 100pps)
60
Typ.
260 (10 s)
16
−55~125
−55~100
―
5
1
Rating
TLP621,TLP621−2,TLP621−4
125
125
55
50
5
7
−0.5 (Ta = 25°C)
Max.
24
20
10
85
TLP621−2
TLP621−4
−0.7
−1.0
−1.5
100
150
50
70
Unit
mA
mA
°C
V
mW /°C
mW /°C
mW /°C
mA /°C
V
Unit
mW
mW
mW
mA
mA
°C
°C
°C
°C
°C
rms
A
V
V
V
2007-10-01