QSE133 Fairchild Semiconductor, QSE133 Datasheet

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QSE133

Manufacturer Part Number
QSE133
Description
Photodetector Transistors Phototransistor Darlington Sidelook
Manufacturer
Fairchild Semiconductor
Type
Phototransistorr
Datasheet

Specifications of QSE133

Maximum Power Dissipation
100 mW
Maximum Dark Current
100 nA
Collector-emitter Breakdown Voltage
30 V
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
Side Looker
Transistor Polarity
NPN
Wavelength Typ
880nm
Power Consumption
100mW
Viewing Angle
25°
No. Of Pins
2
No. Of Channels
1
Operating Temperature Range
-40°C To +100°C
Input Current Max
100µA
Rohs Compliant
Yes
Phototransistor Type
PhotoDarlington
Polarity
NPN
Number Of Elements
1
Lens Type
Black Transparent
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
30V
Collector-emitter Sat Volt (max)
1V
Dark Current (max)
100nA
Light Current
9mA
Rise Time
20000ns
Fall Time
50000ns
Power Dissipation
100mW
Peak Wavelength
880nm
Half-intensity Angle
50deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
Side Looker
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QSE133
Manufacturer:
ATA
Quantity:
10 000
DESCRIPTION
The QSE133 is a silicon photodarlington encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
FEATURES
• NPN silicon phototransistor
• Package type: Sidelooker
• Medium wide reception angle, 50°
• Package material and color: black epoxy
• Matched emitter: QEE113
• Daylight filter
• High sensitivity
© 2002 Fairchild Semiconductor Corporation
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
Ø 0.095 (2.41)
0.050 (1.27)
0.030 (0.76)
PACKAGE DIMENSIONS
0.087 (2.22)
EMITTER
0.100 (2.54)
NOM
0.020 (0.51) SQ.
0.100 (2.54)
(2X)
COLLECTOR
0.175 (4.44)
Ø 0.065 (1.65)
0.500 (12.70)
INFRARED PHOTOTRANSISTOR
0.200 (5.08)
MIN
Page 1 of 4
PLASTIC SILICON
SCHEMATIC
COLLECTOR
EMITTER
QSE133
5/1/02

Related parts for QSE133

QSE133 Summary of contents

Page 1

... Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The QSE133 is a silicon photodarlington encapsulated in a wide angle, infrared transparent, black plastic sidelooker package. FEATURES • NPN silicon phototransistor • Package type: Sidelooker • ...

Page 2

... 100 µ 0.25 mW/ C(ON 0.5 mW/ 0.4 mA CE(SAT 0.15mA 5V 100 Ω Page PLASTIC SILICON QSE133 Symbol Rating T -40 to +100 OPR T -40 to +100 STG T 240 for 5 sec SOL-I T 260 for 10 sec SOL 100 D Min Typ Max — 880 — PS Θ — ±25 — ...

Page 3

... Figure 5. Dark Current vs. Ambient Temperature 6 10 Normalized to 25V 25° =25V Ambient Temperature ( ° Page PLASTIC SILICON QSE133 Figure 2. Angular Response Curve 90 100 80 110 70 120 0.2 0.0 0.0 0.2 0.4 0.6 0.8 0.6 0 =1mW/ =0.5mW/ =0.2mW/ =0.1mW/cm Normalized to 0.5mW/ 25° ...

Page 4

... Fairchild Semiconductor Corporation PLASTIC SILICON INFRARED PHOTOTRANSISTOR 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. Page QSE133 5/1/02 ...

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