XC6SLX25T-3FG484I Xilinx Inc, XC6SLX25T-3FG484I Datasheet - Page 3

• Manufacturer Part Number: XC6SLX25T-3FG484I
• Description: IC FPGA SPARTAN 6 484FGGBGA
• Manufacturer: Xilinx Inc
• Series: Spartan® 6 LXTr

Specifications of XC6SLX25T-3FG484I

• Number Of Logic Elements/cells: 24051
• Number Of Labs/clbs: 1879
• Total Ram Bits: 958464
• Number Of I /o: 250
• Voltage - Supply: 1.14 V ~ 1.26 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C
• Package / Case: 484-BBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Number Of Gates: -

Table 2: Recommended Operating Conditions
Table 3: eFUSE Programming Conditions
DS162 (v2.0) March 31, 2011
Preliminary Product Specification
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. Do not exceed a total of 100 mA per bank.
11. V
Notes:
1.
2.
3.
R
Symbol
V
V
V
V
FUSE
Symbol
CCAUX
CCINT
BATT
FS
I
I
FS
IN
All voltages are relative to ground.
See Interface Performances for Memory Interfaces in
devices that do not support MCB functionality including the LX4 device, the TQG144 and CPG196 packages, and the -3N speed grade.
Recommended maximum voltage droop for V
During configuration, if V
The -1L devices require V
and PPDS_33 I/O standards on inputs. LVPECL_33 is not supported in the -1L devices.
Configuration data is retained even if V
Includes V
For PCI systems, the transmitter and receiver should have common supplies for V
Devices with a -1L speed grade do not support Xilinx PCI IP.
unconnected. When BBR is not used, Xilinx recommends connecting to V
t
These specifications apply during programming of the eFUSE AES key. Programming is only supported through JTAG.The AES key is only supported
in the following devices: XC6SLX75, XC6SLX75T, XC6SLX100, XC6SLX100T, XC6SLX150, and XC6SLX150T.
When programming eFUSE, V
connecting V
An R
connecting the R
j
BATT
(2)
(10)
(3)
(11)
FUSE
is required to maintain the battery backed RAM (BBR) AES key when V
External voltage supply
V
Auxiliary supply voltage relative to GND
External resistor from R
Internal supply voltage relative to GND
Temperature range
FS
resistor is required when programming the eFUSE AES key. When not programming or when eFUSE is not used, Xilinx recommends
CCO
Maximum current through pin using PCI
I/O standard when forward biasing the
clamp diode.
Battery voltage relative to GND, T
to +85C
(XC6SLX75, XC6SLX75T, XC6SLX100,
XC6SLX100T, XC6SLX150, and
XC6SLX150T only)
Battery voltage relative to GND,
T
XC6SLX75T, XC6SLX100,
XC6SLX100T, XC6SLX150, and
XC6SLX150T only)
supply current
j
FS
= –40C to +100C (XC6SLX75,
of 1.2V, 1.5V, 1.8V, 2.5V, and 3.3V.
to GND. However, V
FUSE
pin to V
CCO_2
Description
CCAUX
CCAUX
FS
is 1.8V, then
must be less than or equal to V
FUSE
= 2.5V when using the LVDS_25, LVDS_33, BLVDS_25, LVPECL_25, RSDS_25, RSDS_33, PPDS_25,
FS
or GND. However, R
CCO
can be between GND and 3.45 V.
pin to GND
drops to 0V.
V
CCAUX
CCAUX
j
= 0C
(1)
is 10 mV/ms.
Description
must be 2.5V.
Table
(1)
FUSE
Temperature
25. The standard V
Commercial
Commercial
(Cont’d)
Industrial
Industrial
www.xilinx.com
Range
can be unconnected.
Spartan-6 FPGA Data Sheet: DC and Switching Characteristics
CCAUX
. When not programming or when eFUSE is not used, Xilinx recommends
CCAUX
-3, -3N, -2,
-3, -3N, -2,
-3, -3N, -2,
-3, -3N,-2,
CCAUX
Speed
Grade
CCINT
-1L
-1L
-1L
-1L
or GND. However, V
CCO
(9)
(9)
is not applied. Once V
voltage range applies to designs not using an MCB, or to
.
Performance
Controller
Memory
Block
N/A
N/A
N/A
N/A
(2)
BATT
can be unconnected.
CCAUX
Min
1.0
–
–
is applied, V
1129
1.14
Min
3.2
3.2
15
–
Typ
–
–
–
1140
Typ
3.3
3.3
1.2
–
–
BATT
can be
Max
1151
3.6
Max
3.45
1.26
10
10
3.4
40
85
Units
Units
mA
mA
mA
°C

V
V
V
V
3